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Transport Properties and Observation of Semimetal-Semiconductor Transition in Bi-based Nanowires

Published online by Cambridge University Press:  11 February 2011

Yu-Ming Lin ,
Stephen B. Cronin ,
Oded Rabin ,
Jackie Y. Ying  and
Mildred S. Dresselhaus
Yu-Ming Lin
Affiliation:
Department of Electrical Engineering and Computer Science, Engineering Massachusetts, Institute of Technology, Cambridge, MA 02139
Stephen B. Cronin
Affiliation:
Department of Physics, Engineering Massachusetts, Institute of Technology, Cambridge, MA 02139
Oded Rabin
Affiliation:
Department of Chemistry, Engineering Massachusetts, Institute of Technology, Cambridge, MA 02139
Jackie Y. Ying
Affiliation:
Department of Chemical Engineering Massachusetts, Institute of Technology, Cambridge, MA 02139
Mildred S. Dresselhaus
Affiliation:
Department of Electrical Engineering and Computer Science, Engineering Massachusetts, Institute of Technology, Cambridge, MA 02139 Department of Physics, Engineering Massachusetts, Institute of Technology, Cambridge, MA 02139
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Abstract

Temperature-dependent resistance measurements of Bi-related nanowire arrays with different wire diameters and Sb concentrations are performed. The variation in the measured R(T) curves of these nanowires is closely related to the unique semimetal-semiconductor transition in Bi, and the results are explained by theoretical simulations. It is found that the special feature of the maximum in the resistance ratio R(10 K)/R(100 K) can be employed to experimentally identify the conditions for the semimetal-semiconductor transition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F3.14
Copyright
Copyright © Materials Research Society 2003

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References

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