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Transmission electron microscopy of misfit dislocation and strain relaxation in lattice mismatched III-V heterostructures versus substrate surface treatment

Published online by Cambridge University Press:  20 June 2011

Y. Wang ,
P. Ruterana ,
L. Desplanque ,
S. El Kazzi  and
X. Wallart
Y. Wang
Affiliation:
CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN, 6, Boulevard du Maréchal Juin, 14050 Caen Cedex, France
P. Ruterana
Affiliation:
CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN, 6, Boulevard du Maréchal Juin, 14050 Caen Cedex, France
L. Desplanque
Affiliation:
Institut d’Electronique, de Microélectronique et de Nanotechnologie, UMR-CNRS 8520, BP 60069, 59652 Villeneuve d’Ascq Cedex, France
S. El Kazzi
Affiliation:
Institut d’Electronique, de Microélectronique et de Nanotechnologie, UMR-CNRS 8520, BP 60069, 59652 Villeneuve d’Ascq Cedex, France
X. Wallart
Affiliation:
Institut d’Electronique, de Microélectronique et de Nanotechnologie, UMR-CNRS 8520, BP 60069, 59652 Villeneuve d’Ascq Cedex, France
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Abstract

High resolution transmission electron microscopy in combination with geometric phase analysis is used to investigate the interface misfit dislocations, strain relaxation, and dislocation core behavior versus the surface treatment of the GaAs for the heteroepitaxial growth of GaSb. It is pointed out that Sb-rich growth initiation promotes the formation of a high quality network of Lomer misfit dislocations that are more efficient for strain relaxation.

Keywords

transmission electron microscopy (TEM)III-VSb
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1324: Symposium D – Compound Semiconductors for Energy Applications and Environmental Sustainability , 2011 , mrss11-1324-d13-04
Copyright
Copyright © Materials Research Society 2011

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References

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