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Transition State Model for Grain Boundary Motion During Ion Bombardment

Published online by Cambridge University Press:  26 February 2011

Harry A. Atwater ,
Carl V. Thompsonm  and
Henry I. Smith
Harry A. Atwater
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02138
Carl V. Thompsonm
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02138
Henry I. Smith
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02138
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Abstract

Ion bombardment of polycrystalline Ge, Si, and Au films leads to rates of grain boundary motion that greatly exceed rates of thermally-induced motion at the same temperature and which exhibit a weak temperature dependence. The enhanced migration rate is proportional to the rate of energy deposition in nuclear collisions at or very near the grain boundary. Experimental work is reviewed, and a transition state model is presented which accounts for the observed kinetics of grain boundary migration during bombardment. This model suggests that the rate limiting step in grain boundary motion may be thermally-induced migration of a bombardment-generated defect across the boundary. Also, the ratio of atomic jumps at grain boundaries to the local collision-induced Frenkel defect generation rate is shown to be characteristic of each material, but independent of ion mass and ion flux. The model is extended to the motion of an interface between two phases, and applications to crystallization during ion bombardment are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 345
Copyright
Copyright © Materials Research Society 1988

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References

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