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Towards an All-Hot-Wire TFT: Silicon Nitride and amorphous Silicon deposited by Hot-Wire Chemical Vapor Deposition

Published online by Cambridge University Press:  17 March 2011

B. Stannowski ,
M.K. van Veen  and
R.E.I. Schropp
B. Stannowski
Affiliation:
Utrecht University, Debye Institute, Physics of Devices, P. O. Box 80000, 3508 TA Utrecht, the Netherlands
M.K. van Veen
Affiliation:
Utrecht University, Debye Institute, Physics of Devices, P. O. Box 80000, 3508 TA Utrecht, the Netherlands
R.E.I. Schropp
Affiliation:
Utrecht University, Debye Institute, Physics of Devices, P. O. Box 80000, 3508 TA Utrecht, the Netherlands
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Abstract

We present thin-film transistors with both amorphous silicon and silicon nitride deposited by hot-wire chemical vapor deposition. Hot-wire amorphous silicon with good electrical properties was deposited from the decomposition of silane at a substrate temperature of 250°C. For Hot-wire silicon nitride we used silane and ammonia at a substrate temperature of 340°C. In this paper we address structural and electrical properties of this material. A high ammonia flow results in porous films that exhibit post-deposition oxidation. By limiting the ammonia/silane ratio to 30, compact layers with a hydrogen content of only 10 at.% and a refractive index of 1.95 are obtained. Using this layer as gate dielectric results in thin-film transistors with good switching behavior and a field-effect mobility of 0.3 cm2/Vs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A17.3
Copyright
Copyright © Materials Research Society 2001

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References

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