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Time-resolved Spectroscopy of Excitons Bound at Shallow Neutral Donors in HVPE GaN

Published online by Cambridge University Press:  01 February 2011

Bo Monemar ,
P. P. Paskov ,
J. P. Bergman ,
T. Malinauskas ,
K. Jarasiunas ,
A. A. Toropov ,
T. V. Shubina  and
A. Usui
Bo Monemar
Affiliation:
[email protected], Linkoping University, Linkoping University, Linkoping, Linkoping, 581 83, Sweden
P. P. Paskov
Affiliation:
[email protected], Linkoping University, Sweden
J. P. Bergman
Affiliation:
[email protected], Linkoping University, Sweden
T. Malinauskas
Affiliation:
[email protected], Vilnius University, Lithuania
K. Jarasiunas
Affiliation:
[email protected], Vilnius University, Lithuania
A. A. Toropov
Affiliation:
[email protected], Ioffe Physico-Technical Institute, Russian Federation
T. V. Shubina
Affiliation:
[email protected], Ioffe Physico-Technical Institute, Russian Federation
A. Usui
Affiliation:
[email protected], Furukawa Co., Ltd, Japan
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Abstract

Time-resolved photoluminescence (TRPL) spectroscopy has been performed in the temperature range 2 K to 300 K on thick (300 μm – 1 mm) nominally undoped bulk HVPE grown GaN layers. The PL spectra are dominated by the free excitons (FEs) and the two neutral donor bound excitons (DBEs) at about 3.4712 eV and 3.4721 eV at 2 K, assigned to the residual O and Si donors, respectively. The zero-phonon decay curves for both FEs and DBEs are nonexponential, with a fast initial decay and a slower tail at longer times. The initial decay time of the FE is about 130 ps at 2 K in such samples, the corresponding initial decay time for the DBEs for O and Si is close to 300 ps. The different lines corresponding to the so called two-electron transitions for the DBE show a different behaviour, with a longer decay time than the corresponding principal DBE states. The LO phonon replicas of the DBEs also have a decay time in excess of 1 ns in lightly doped samples.

Keywords

luminescencedopantnitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF20-01
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Dean, P. J. and Herbert, D. C., in Excitons, edited by Cho, K. (Springer, Berlin, 1979), p. 55.CrossRefGoogle Scholar
2. Dexter, D., in Solid State Physics, edited by Seitz, F and Turnbull, D (Academic, New York, 1958) Vol. 6, p. 353.Google Scholar
3. Freitas, J. A. Jr., Moore, W. J., Shanabrook, B. V., Braga, G. C. B., Lee, S. K., Park, S. S., and Han, J. Y., Phys. Rev. B 66, 233311 (2002).CrossRefGoogle Scholar
4. Freitas, J. A. Jr., Moore, W. J., Shanabrook, B. V., Phys. Rev. B 69, 157301 (2004).CrossRefGoogle Scholar
5. Wysmolek, A., Korona, K. P., Stepniewski, R., Baranowski, J. M., Bloniarz, J., Potemski, M., Jones, R. L., Look, D. C., Kuhl, J., Park, S. S., and Lee, S. K., Phys. Rev. B 69, 157302 (2004).CrossRefGoogle Scholar
6. Eckey, L., Holst, J.-Ch., Maxim, P., Heitz, R., Hoffmann, A., Broser, I., Meyer, B. K., Wetzel, C., Mokhov, E. N., and Baranov, P. G., Appl. Phys. Lett. 68, 415 (1996).CrossRefGoogle Scholar
7. Bergman, J. P., Monemar, B., Amano, H., Akasaki, I., Hiramatsu, K., Sawaki, N., and Detchprohm, T., Proc. Int. Conf on Silicon Carbide and Related Materials, Kyoto, Japan, 1995, Inst. of Phys. Conf. Ser. 142, 931 (1996).Google Scholar
8. Bunea, G. E., Herzog, W. D., Ünlü, M. S., Goldberg, B. B., and Molnar, R. L., Appl. Phys. Lett. 75, 838 (1999).CrossRefGoogle Scholar
9. Korona, K. P., Phys. Rev. B 65, 235312 (2002).CrossRefGoogle Scholar
10. Beaumont, B., Gibart, P., Vaille, M., Haffouz, S., Nataf, G., and Bouillé, A., J. Cryst. Growth 189/190, 97 (1998).CrossRefGoogle Scholar
11. Neu, G., Teisseire, M., Lemasson, P., Lachrede, H., Grandjean, N., Semond, F., Beaumont, B., Grzegory, I., Porowski, S., and Triboulet, R., Physica B 302–303, 39 (2001).CrossRefGoogle Scholar
12. Korona, K. P., Wysmolek, A., Stepniewski, R., Kuhl, J., Look, D. C., Lee, S. K., and Han, J. Y., J. Luminescence 112, 30 (2005).CrossRefGoogle Scholar