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Time-Lapse Measurements of Creep in Au-Sn Die Bonds

Published online by Cambridge University Press:  26 February 2011

Ryan Marinis ,
Adam Klempner ,
Peter Hefti ,
Ryszard Pryputniewicz ,
Thomas Marinis  and
Joseph Soucy
Ryan Marinis
Affiliation:
[email protected], Worcester Polytecnic Institute, Mechanical Engineering, 100 Institute Road, Worcester MA 01609-2280, United States
Adam Klempner
Affiliation:
[email protected], Worcester Polytecnic Institute, Mechanical Engineering, 100 Institute Road, Worcester, MA, 01609-2280, United States
Peter Hefti
Affiliation:
[email protected], Worcester Polytecnic Institute, Mechanical Engineering, 100 Institute Road, Worcester, MA, 01609-2280, United States
Ryszard Pryputniewicz
Affiliation:
[email protected], Worcester Polytecnic Institute, Mechanical Engineering, 100 Institute Road, Worcester, MA, 01609-2280, United States
Thomas Marinis
Affiliation:
[email protected], Draper Laboratory, 555 Technology Square, Cambridge, MA, 02139, United States
Joseph Soucy
Affiliation:
[email protected], Draper Laboratory, 555 Technology Square, Cambridge, MA, 02139, United States
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Abstract

Gold-tin braze is the preferred material for attaching high-precision MEMS inertial sensors within hermetic ceramic packages. The bonds can be made at relatively low temperatures, are mechanically robust, and outgas at very low rates in vacuum sealed packages. There is one significant limitation to Au-Sn bonds, however. The thermal expansion coefficients of MEMS die and ceramic packages are not perfectly matched and temperature gradients occur when the assembly is cooled after brazing. As a result, there is considerable residual stress in the bonded assembly, which is accommodated to some extent by distortion of the sensor die. Over time, as these stresses relax, the distortion of the die changes, which causes the spacing between elements of the integral MEMS sensor to change as well. An important element of sensor-package design is insuring that stress relaxation effects do not cause the instrument to drift beyond its performance specification limits over a typical lifetime of 20 years.

Even though Au-Sn has been used for decades to attach silicon chips to ceramic substrates, there is little data available, particularly at low temperatures. An oven, with a specially designed window, allowed in-situ measurements to be made as a function of temperature, joint thickness and load stress. Additionally, a MEMS device brazed to a package with Au-Sn has been measured interferometrically over time to quantify die distortion in a packaged application.

Keywords

microelectro-mechanical (MEMS)brazingmetal
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 968: Symposium V – Advanced Electronic Packaging , 2006 , 0968-V04-06
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Francon, M., Optical Interferometry, Academic Press, New York, 1966, p. 201.Google Scholar
2. Kreis, Thomas, Holographic Interferometry Principles and Methods, Akademie Verlag, Berlin, 1996, pp. 126–129.Google Scholar
3. Dieter, George E., Mechanical Metallurgy, McGraw-Hill, New York, 1961, p. 354 Google Scholar
4. Findley, William N., Lai, James S., and Onaran, Kasif, Creep and Relaxation of Nonlinear Viscoelastic Materials, Dover Publications, New York, 1976, p. 53 Google Scholar
5. Yost, F. G., Karnowsky, M. M., Drotning, W. D., and Gieske, J. H., Metallurgical Transactions A, vol. 21A, July, 1990, pp. 1885–1889, "Thermal Expansion and Elastic Properties of High Gold-Tin Alloys"Google Scholar
6. Chandran, Biju I., PhD Thesis, University of Arkansas, 1996, “Determination and Utilization of AuSn Creep Properties for Bonding Devices with Large CTE Mismatches”Google Scholar