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Three-Dimensional Finite Element Simulation of Electro and Stress Migration Effects in Interconnect Lines

Published online by Cambridge University Press:  10 February 2011

Sven Rzepka ,
Matt A. Korhonen ,
Eicke R. Weber  and
Che-Yu Li
Sven Rzepka
Affiliation:
Dept. MSE, Cornell University, Ithaca, NY 14853–1501; [email protected]
Matt A. Korhonen
Affiliation:
Dept. MSE, Cornell University, Ithaca, NY 14853–1501; [email protected]
Eicke R. Weber
Affiliation:
Dept. MSE, Cornell University, Ithaca, NY 14853–1501; [email protected]
Che-Yu Li
Affiliation:
Dept. MSE, Cornell University, Ithaca, NY 14853–1501; [email protected]
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Abstract

A tool for 3-D modeling of EM and SM in interconnect lines has been developed based on a commercial finite element code. After detailing the approach, we focus on the verification of the simulator by comparing the results of 1-D analytic and FEM simulations, and then we apply the simulator to interconnect line segments with a specified grain structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 329
Copyright
Copyright © Materials Research Society 1997

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References

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