Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-08T04:56:30.974Z Has data issue: false hasContentIssue false
  • English
  • Français

Thin Single Crystal Silicon on Oxide by Lateral Solid Phase Epitaxy of Amorphous Silicon and Silicon Germanium

Published online by Cambridge University Press:  17 March 2011

Brian J. Greene ,
Joseph Valentino ,
Judy L. Hoyt  and
James F. Gibbons
Brian J. Greene
Affiliation:
Solid State Electronics and Photonics Laboratory, Stanford University, Stanford, CA 94305
Joseph Valentino
Affiliation:
Solid State Electronics and Photonics Laboratory, Stanford University, Stanford, CA 94305
Judy L. Hoyt
Affiliation:
Solid State Electronics and Photonics Laboratory, Stanford University, Stanford, CA 94305
James F. Gibbons
Affiliation:
Solid State Electronics and Photonics Laboratory, Stanford University, Stanford, CA 94305
Get access

Abstract

The fabrication of 250 Å thick, undoped, single crystal silicon on insulator by lateral solid phase epitaxial growth from amorphous silicon on oxide patterned (001) silicon substrates is reported. Amorphous silicon was grown by low pressure chemical vapor deposition at 525°C using disilane. Annealing at temperatures between 540 and 570°C is used to accomplish the lateral epitaxial growth. The process makes use of a Si/Si1-xGex/Si stacked structure and selective etching. The thin Si1-xGex etch stop layer (x=0.2) is deposited in the amorphous phase and crystallized simultaneously with the Si layers. The lateral growth distance of the epitaxial region was 2.5 μm from the substrate seed window. This represents a final lateral to vertical aspect ratio of 100:1 for the single crystal silicon over oxide regions after selective etching of the top sacrificial Si layer. The effects of Ge incorporation on the lateral epitaxial growth process are also discussed. The lateral epitaxial growth rate of 20% Ge alloys is enhanced by roughly a factor of three compared to the rate of Si films at an anneal temperature of 555°C. Increased random nucleation rates associated with Ge alloy films are shown to be an important consideration when employing Si1-xGex to enhance lateral growth or as an etch stop layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A9.3
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Moniwa, M., Kusukawa, K., Murakami, E., Warabisako, T., Miyao, M., Appl. Phys. Lett. 52 (21), 1788 (1988)Google Scholar
2. Ishiwara, H., Dan, T., Fukao, K., Jpn. J. Appl. Phys. Part 1 31 (6A), 1695 (1992)Google Scholar
3. Godbey, D., Hughes, H., Kub, F., Twigg, M., Palkuti, L., Leonov, P., J. Wang, Appl. Phys. Lett. 56 (4), 373, (1990)Google Scholar
4. Wang, F., Shi, Y., Liu, J., Lu, Y., Gu, S., Zheng, Y., J. Electrochem Soc. 144 (3), L37 (1997)Google Scholar
5. Johnson, F. S., Miles, D. T., Grider, D. T., Wortman, J. J., J. Electron. Mat. 21 (8), 805 (1992)Google Scholar
6. Olson, G. L., Roth, J. A., in Handbook of Crystal Growth, Vol 3, edited by Hurle, D.T.J. (Elsevier Science, New York, 1994), p. 272, 294-5.Google Scholar