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Thin Film on Asic - A Novel Concept for Intelligent Image Sensors

Published online by Cambridge University Press:  21 February 2011

H. Fischer ,
J. Schulte ,
J. Giehl ,
M. Böhm  and
J. P. M. Schmitt
H. Fischer
Affiliation:
University of Siegen, Center for Sensor Systems, W-5900 Siegen, Germany
J. Schulte
Affiliation:
University of Siegen, Center for Sensor Systems, W-5900 Siegen, Germany
J. Giehl
Affiliation:
University of Siegen, Center for Sensor Systems, W-5900 Siegen, Germany
M. Böhm
Affiliation:
University of Siegen, Center for Sensor Systems, W-5900 Siegen, Germany
J. P. M. Schmitt
Affiliation:
Solems SA, Rue Léon Blum, F-91124, Palaiseau Cedex, France
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Abstract

Two different pixel detectors have been fabricated, each of them consisting of an a-Si:H based photodiode layer on top of a crystalline silicon integrated circuit. Both sensors are arranged in a matrix and addressed columnwise, providing parallel readout of the matrix rows or optional random access. One sensor is an a-Si:H detector / x-Si switching transistor combination with 256 × 256 pixels and a pixel size of 100μm × 100μm. The signal transport in the array is examined, demonstrating its capability of very fast information readout. The second sensor, which consists of an array of 32 × 32 pixels on a 5μm PMOS ASIC, performs digital contour extraction. Experimental data on the performance of the intelligent array are also reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 1139
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Manabe, S. et al., IEEE Trans. Electron Devices 38, 1765 (1991).Google Scholar
2. Standley, D. L., IEEE J. Solid-State Circuits 26, 1853 (1991).Google Scholar
3. Yadin-Pecht, O., Ginosar, R., Diamand, Y. S., IEEE Trans. Electron Devices 38, 1772(1991).Google Scholar
4. Perez-Mendez, V., Cho, G., Drewery, J., Jing, T., Kaplan, S. N., Qureshi, S., Wildermuth, D., J. of Non-Cryst. Solids 137 & 138, 1291 (1991).Google Scholar
5. Fujieda, I., Nelson, S., Nylen, P., Street, R. A., Weisfield, R. L., J. of Non-Cryst. Solids 137 & 138, 1321 (1991).CrossRefGoogle Scholar
6. Böhm, M., Salamon, S., Kiss, Z., Mat. Res. Soc. Symp. Proc. 118, 243 (1988).Google Scholar
7. Böhm, M., Solid State Technology 21, no. 9, 129 (1988).Google Scholar
8. Weisfield, R. L., Tsai, C. C., Mat. Res. Soc. Symp. Proc. 192, 423 (1990).Google Scholar
9. Brunst, G., Griep, S., Harms, H., Rohleder, K., Rosan, K., Mat. Res. Soc. Symp. Proc. 118, 249 (1988).Google Scholar