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Thick Film Capacitors with Variable Tc on Cu Foils

Published online by Cambridge University Press:  01 February 2011

Byeong Kon Kim ,
Dong Joo Shin ,
Jun Kwang Song  and
Yong Soo Cho
Byeong Kon Kim
Affiliation:
[email protected], Yonsei university, Materials science & Engineering, 134 Shinchon-dong, Seodaemun-gu, Seoul, 120-749, Korea, Republic of
Dong Joo Shin
Affiliation:
[email protected], Samsung Electro-Mechanics, Suwon, 442-743, Korea, Republic of
Jun Kwang Song
Affiliation:
[email protected], Korea Testing Laboratory, Materials analysis team, Seoul, 152-718, Korea, Republic of
Yong Soo Cho
Affiliation:
[email protected], Yonsei university, Materials science & Engineering, Seoul, 120-718, Korea, Republic of
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Abstract

High k dielectric thick films, consisting of BaTiO3, a low softening glass and fluoride compounds, were studied to apply them as potential low temperature N2-fireable capacitors on commercially-available Cu foils. Different additive combinations of LiF, ZnF2 and BaF2 were specifically compared in terms of dielectric constant, dielectric loss and Curie temperature (Tc) for the purpose of optimizing dielectric performance. The thick film consisting of 95BaTiO3-1.5LiF-1.5ZnF2-2 bismuth borosilicate glass exhibited the best performance, i.e., a dielectric constant of 2,382 and a dissipation factor of 0.021 at Tc of 27°C at the firing temperature of 950°C. This result can be regarded as one of the best performance, compared to literature reported on embedded capacitors in Cu-PCB applications. No apparent Cu-diffusion was detected across the Cu-thick film-Cu foil structure.

Keywords

dielectric propertiesadditivesCu
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1075: Symposium J – Passive and Electromechanical Materials and Integration , 2008 , 1075-J07-10
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Borland, W. Flten, J., Ferguson, S. Jones, A. and Lawrence, A. “Embedded singulated Ceramic Psssives in Printed Wiring Boards”, IMAPS Advanced Technology Workshop on Passive Integration, Ogunquit, ME, June 19, 2002.Google Scholar
2. Felten, J. and Ferguson, S. “Embedded Ceramic Resistors and Capacitors for PWB”, IPC Printed Circuit Expo, San Diego, CA, April 2000.Google Scholar
3. Huang, C. L. Weng, M. H. Lion, C. T. Wu, C. C. Mater. Res. Bull. 35, 2445 (2000).Google Scholar
4. Qi, J. Li, L. Wang, Y. Fan, Y. Gui, Z. Mater. Chem. Phys. 82, 423 (2003).Google Scholar
5. Tolino, D. A. Blum, J. B. J. Am. Ceram. Soc. 68, C292 (1985).Google Scholar
6. Stojanovic, B. D. Foschini, C. R. Pejovic, V. Z. Pavlovic, V. B. and Varela, J. A. J. Euro.Ceram. Soc. 24, 1467 (2004).Google Scholar
7. Guha, J. P. and Anderson, H. U. J. Am. Ceram. Soc. 69, C193 (1986).Google Scholar
8. Desgardin, G. Mey, I. Raveau, B. and Haussonne, J. M. J. Am. Ceram. Soc. Bul. 64, 564 (1985).Google Scholar
9. Haussonne, J.M. Desgardin, G. Bajolet, P. and Raveau, B. J. Am. Ceram. Soc. 66, 801 (1983).Google Scholar
10. Benziada, A. Ravez, J. Hagenmuller, P. J. Fluorine Chem. 26, 395 (1984).Google Scholar
11. Makovec, D. Drofenik, M. and Baker, J. J. Am. Ceram. Soc. 86, 495 (2003).Google Scholar
12. Kim, B. K. Shin, D. J. Choi, I. J. Lee, J. W. Kim, J. C. Kang, N. K. Song, J. K. and Cho, Y. S., J. Electroceram. (in press).Google Scholar
13. Benziada, A. Ravez, J. J. Fluorine Chem. 73, 69 (1995).Google Scholar