Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-28T15:45:35.807Z Has data issue: false hasContentIssue false

Thermomechanical Behavior of Continuous and Patterned Al Thin Films

Published online by Cambridge University Press:  10 February 2011

O. Kraft
Affiliation:
Max-Planck-Institut für Metallforschung, Seestr. 92, D-70174 Stuttgart, Germany
W.D. Nix
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305-2205
Get access

Abstract

In this paper, we study the influence of the line width on the mechanical behavior of narrow unpassivated lines of pure Al and Al with 0.5 wt.-% Cu. The stress/temperature behavior during thermal cycling is investigated using x-ray diffractometry. Our results suggest that it is possible to distinguish between two temperature regimes in which different deformation mechanisms take place. At low temperatures, the narrowest lines sustain larger stresses than the continuous films, whereas at high temperatures the opposite behavior was found. Further, iso-thermal stress relaxation measurements on pure Al lines after various heat treatments were performed. These results indicate the existence of a threshold stress below which no deformation of the lines occurs.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Flinn, P.A., Gardner, D.S. und Nix, W.D., IEEE Transaction on Electron Devices, ED–34, 689 (1987)10.1109/T-ED.1987.22981Google Scholar
[2] Gardner, D.S. und Flinn, P.A., in Thin Films: Stresses and Mechanical Properties (Mat. Res. Soc. Symp. Proc. 130, Pittsburgh, PA, 1988) 69 Google Scholar
[3] Venkatraman, R. und Bravman, J.C., J. Mater. Res. 7, 2040 (1992)10.1557/JMR.1992.2040Google Scholar
[4] Volkert, C.A., Alofs, C.F. und Liefting, J.R., J. Mater. Res. 9, 1147 (1994)Google Scholar
[5] Freund, L.B., J. Appl. Mech. 54, 553 (1987)10.1115/1.3173068Google Scholar
[6] Nix, W.D., Met. Trans. A 20, 22172245 (1989)10.1007/BF02666659Google Scholar
[7] Thompson, C.V., J. Mater. Res. 8, 237238 (1993)10.1557/JMR.1993.0237Google Scholar
[8] Kirchner, S., Kraft, O., Baker, S.P. und Arzt, E., in Thin Films: Stresses and Mechanical Properties VI, (Mat. Res. Soc. Symp. Proc., Pittsburgh, PA, 1997) 21 Google Scholar
[9] Joo, Y.-C., Millner, P., Baker, S.P. und Arzt, E., in Materials Reliability in Microelectronics VII, (Mat. Res. Soc. Symp. Proc. 473, Pittsburgh, PA, 1997) 409 Google Scholar
[10] Besser, P.R., Bader, S., Venkatraman, R. und Bravman, J.C., in Thin Films: Stresses and Mechanical Properties IV, (Mat. Res. Soc. Symp. Proc. 309, Pittsburgh, PA, 1993) 255 Google Scholar
[11] Bader, S., Flinn, P.A., Arzt, E. und Nix, W.D., J. Mater. Res. 9, 318327 (1994)10.1557/JMR.1994.0318Google Scholar
[12] Flinn, P.A. und Chiang, C., J. Appl. Phys. 67, 29272931 (1990)Google Scholar
[13] Besser, P.R., Brennan, S. und Bravman, J.C., J. Mater. Res. 9, 13 (1994)10.1557/JMR.1994.0013Google Scholar
[14] Kuschke, W.-M. und Arzt, E., Appl. Phys. Lett. 64, 10971099 (1994)Google Scholar
[15] Burges, U., Eppler, I., Schilling, W., Schroeder, H. und Trinkaus, H., in Third Int. Workshop on Stress-Induced Phenomena In Metallization, (AIP Conf. Proc. 373, Woodbury, NY, 1996) 81 Google Scholar
[16] Nielen, H., Göbel, H., Eppler, I., Schroeder, H. und Schilling, W., in Materials Reliability in Microelectronics VII, (Mat. Res. Soc. Symp. Proc. 473, Pittsburgh, PA, 1997) 409 Google Scholar
[17] Roths, C., Hdnings, J., Eppler, I. und Schroeder, H., in Materials Reliability in Microelectronics VII, (Mat. Res. Soc. Symp. Proc. 473, Pittsburgh, PA, 1997) 415 Google Scholar
[18] Cornella, G., Lee, S.-H., Nix, W.D. und Bravman, J.C., Appl. Phys. Lett. 68, 2949 (1997)Google Scholar
[19] Kraft, O. und Nix, W.D., J. Appl. Phys. 83 (1998)Google Scholar
[20] Flinn, P.A. und Waychunas, G.A., J. Vac. Sci. Technol. B 6, 1749 (1988)10.1116/1.584172Google Scholar
[21] Harrison, R.D., Datenbuch Chemie, Physik, Vieweg, (1982)Google Scholar
[22] Murray, J.L., Int. Metall. Rev. 130, 211 (1985)Google Scholar
[23] Baldwin, F., Holloway, P.H., Bordelon, M. und Watkins, T.R., in Third Int. Workshop on Stress-Induced Phenomena In Metallization, (AIP Conf. Proc. 373, Woodbury, NY, 1996)81 Google Scholar
[24] Jawarani, D., Fernandes, M., Kawasaki, H. und Ho, P.S., in Third Int. Workshop on Stress-Induced Phenomena In Metallization, (AlP Conf. Proc. 373, Woodbury, NY, 1996) 58 Google Scholar
[25] Burges, U., Helneder, H., Körner, H., Schroeder, H. und Schilling, W., in Materials Reliability in Microelectronics IV, (Mat. Res. Soc. Symp. Proc. 338, Pittsburgh, PA, 1994) 247 Google Scholar