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Thermoelectric Transport Properties of Individual Bismuth Nanowires

Published online by Cambridge University Press:  21 March 2011

Stephen B. Cronin
Affiliation:
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139
Yu-Ming Lin
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139
Oded Rabin
Affiliation:
Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA 02139
Marcie R. Black
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139
Gene Dresselhaus
Affiliation:
Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, MA 02139
Mildred S. Dresselhaus
Affiliation:
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139 Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

We developed a method for making 4-point contacts to Bi nanowires with a thick oxide coat using a combination of lithographic and focused ion beam (FIB) techniques. The resistivity of Bi nanowires with diameters in the range 70-200nm is found to increase with decreasing wire diameter. In contrast to bulk Bi, the temperature dependence of the resistivity is found to decrease monotonically with increasing temperature. The results are explained on the basis of increased scattering in the nanowire and the known temperature dependence of the electronic properties of bulk Bi. A large magneto-resistance was also measured, indicating a high crystalline quality of the nanowires. A large spread in the measured values of the resistivity indicates significant systematic error in the measurement technique. Possible sources for error are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

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