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Thermoelectric Properties of Sb-doped Sintered Mg2Si Fabricated using Commercial Polycrystalline Sources

Published online by Cambridge University Press:  31 January 2011

Naoki Fukushima ,
Tsutomu Iida ,
Masayasu Akasaka ,
Takashi Nemoto ,
Tatsuya Sakamoto ,
Ryo Kobayashi ,
Hirohisa Taguchi ,
Keishi Nishio  and
Yoshifumi Takanashi
Naoki Fukushima
Affiliation:
[email protected], Tokyo University of Science, Nodashi, Chiba, Japan
Tsutomu Iida
Affiliation:
[email protected], Tokyo University of Science, Nodashi, Chiba, Japan
Masayasu Akasaka
Affiliation:
[email protected], Dow Corning Toray Co., Ltd.,, Ichihara City, Japan
Takashi Nemoto
Affiliation:
[email protected], Nippon Thermostat Co., Ltd.,, Kiyose-shi, Japan
Tatsuya Sakamoto
Affiliation:
[email protected], Tokyo University of Science, Nodashi, Chiba, Japan
Ryo Kobayashi
Affiliation:
[email protected], Tokyo University of Science, Nodashi, Chiba, Japan
Hirohisa Taguchi
Affiliation:
[email protected], Tokyo University of Science, Nodashi, Chiba, Japan
Keishi Nishio
Affiliation:
[email protected], Tokyo University of Science, Nodashi, Chiba, Japan
Yoshifumi Takanashi
Affiliation:
[email protected], Tokyo University of Science, Nodashi, Chiba, Japan
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Abstract

The thermoelectric (TE) properties, such as the Seebeck coefficient, the electrical and thermal conductivities, and the output power, of Sb-doped n-type Mg2Si were studied. A commercial polycrystalline source was used for the source material for the Mg2Si. TE elements with Ni electrodes were fabricated by using a monobloc plasma-activated sintering (PAS) technique. Compared with undoped samples, the ZT values of the Sb-doped samples were higher over the whole temperature range in which measurements were made; the maximum value for the Sb doped Mg2Si was 0.72 at 864 K. The TE characteristics of Sb-doped samples were found to be comparable to those of Bi-doped ones, and no significant difference in ZT value was observed between them. Provisional results showed that the maximum value of the output power was 6.75 mW for the undoped sample, 4.55 mW for a 0.5 at% Sb doped sample, and 5.25 mW for a 1 at% Sb doped sample with ΔT = 500 K (between 873 K and 373 K).

Keywords

thermoelectricSbsintering
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1166: Symposium N – Materials and Devices for Thermal-to-Electric Energy Conversion , 2009 , 1166-N03-21
Copyright
Copyright © Materials Research Society 2009

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References

[1]Boriseneko, Victor E., Semiconducting Silicide, (Springer, Berlin, 2000), p.285.Google Scholar
[2]Morris, R.G., Redin, R.D. and Danielson, G.C., Phys. Rev. 109, 1909 (1958)Google Scholar
[3]Bose, S., Acharya, H.N., and Banerjee, H.D., J.Mater. Sci. 28 (1993) 5461.Google Scholar
[4]Noda, Y., Kon, H., Furukawa, Y., Otuka, N., INishida, .A., Masumoto, K.. Mater. Trans. JIM. 33, 845 (1992).Google Scholar
[5]Akasaka, M., Iida, T., Nemoto, T., Soga, J., Sato, J., Makino, K., Fukano, M., and Takanashi, Y., Journal of Crystal Growth. 304, 196 (2007).Google Scholar
[6]Kato, A., unpublish.Google Scholar
[7]Tani, J., Kido, H., Intermetallics, 15, 1202 (2007).Google Scholar
[8]Lin, X.S., Wang, D., Beekman, M., and Nolas, G.S., MRS Stmp. Proc, 1044 (2008).Google Scholar
[9]Kittel, C., Introduction to Solid State Physics. 8th ed. (Wiley, NJ, 2005), pp.156–157 Google Scholar