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Thermally-Stimulated Currents in Thin-Film Semiconductors: Analysis and Modelling

Published online by Cambridge University Press:  01 February 2011

Charles Main ,
Nacera Souffi ,
Steve Reynolds ,
Zdravka Aneva ,
Rudi Brüggemann  and
Mervyn Rose
Charles Main
Affiliation:
[email protected], University of Dundee, Electronic Engineering and Physics, Nethergate, Dundee, N/A, N/A, United Kingdom, +44 (0)1382-386550
Nacera Souffi
Affiliation:
[email protected], Carl von Ossietzky Universität Oldenburg, Institut für Physik, Oldenburg, N/A, N/A, Germany
Steve Reynolds
Affiliation:
[email protected], Forschungszentrum Jülich, Institut für Photovoltaik, Jülich, N/A, N/A, Germany
Zdravka Aneva
Affiliation:
[email protected], Bulgarian Academy of Sciences, Institute of Solid State Physics, Sofia, N/A, N/A, Bulgaria
Rudi Brüggemann
Affiliation:
[email protected], Carl von Ossietzky Universität Oldenburg, Institut für Physik, Oldenburg, N/A, N/A, Germany
Mervyn Rose
Affiliation:
[email protected], University of Dundee, Electronic Engineering and Physics, Dundee, N/A, N/A, United Kingdom
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Abstract

This paper investigates the robustness of the thermally stimulated current technique as a method to determine the density of states distribution in thin film semiconductors under a wide range of conditions. Numerical simulation is used to solve the non-linear time-dependent rate equations for free and trapped charge in systems with continuous and structured DOS profiles. We explore the derivation of energy and density scales from temperature and conductivity data. We examine for these systems the limits of the method's apparent immunity to varying conditions of strong and weak retrapping, and investigate the corrections required for variations in carrier lifetime with temperature.

Keywords

thermally stimulated currentamorphousSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A09-02
Copyright
Copyright © Materials Research Society 2006

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References

1. Simmons, J.G., Taylor, G.W., Tam, M.C., Phys. Rev. B 7 (1973) 3714.Google Scholar
2. Landweer, G., Bezemer, J., in Fritzsche, H. (Ed) Amorphous Silicon and Related materials, World Scientific, Singapore, 1988, p525.Google Scholar
3. Schmidt, J. A., Koropecki, R.R., Arce, R., Dussan, A., Buitrago, R.H., J.Non-Cryst. Solids 338–340 (2004) 322.Google Scholar
4. Misra, D.S., Kumar, A., Agarwal, S.C., Phys. Rev. B 31 (1985) 1047.Google Scholar
5. Fritzsche, H., Ibaraki, N., Phil. Mag. B 52 (1985) 299.Google Scholar
6. Main, C, Brüggemann, R in Electronic and Optoelectronic Materials for the 21st Century, ed Kirov, N, Vavrek, A (World Scientific Press, 1993) 270–278.Google Scholar