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Thermal Cycling Fatigue In Aluminum-Alloy Thin Films On Silicon Substrate

Published online by Cambridge University Press:  10 February 2011

J. Koike ,
S. Utsunomiya  and
K. Maruyama
J. Koike
Affiliation:
Dept. of Materials Science, Graduate School of Engineering Tohoku University, Sendai 980–77, Japan, [email protected]
S. Utsunomiya
Affiliation:
Dept. of Materials Science, Graduate School of Engineering Tohoku University, Sendai 980–77, Japan, [email protected]
K. Maruyama
Affiliation:
Dept. of Materials Science, Graduate School of Engineering Tohoku University, Sendai 980–77, Japan, [email protected]
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Abstract

Thermal cycling was performed in Al-lmo%Si thin films deposited on Si wafers. After a given number of cycling between room temperature and 723 K, residual stress was measured at room temperure. Residual stress was found to increase with increasing the cycling number up to the 4th cycle, followed by further a continuous decrease by further cycling. The intial increase was found to be related to the increase of lattice dislcocations and their tangling. The following decrease was caused by crack formation along grain boundaties or by film delamination in some cases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 505 , 1997 , 319
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1.Santoro, C. J., J. Electrochem. Soc. 116,361 (1969)Google Scholar
2.Pennebaker, W. B., J. Appl. Phys. 40, 394 (1969)Google Scholar
3.Chaudhari, P., J. Appl. Phys. 45, 4339 (1974)Google Scholar
4.Ronay, M. and Aliotta, C. F., Philos. Mag. A 42, 161 (1980)Google Scholar
5.Ericson, F., Kristensen, N. and Schweitz, J.-A., J. Vac. Sci. Technol. B 9, 58 (1991)Google Scholar
6.Martin, B. C., Tracy, C. J., Mayer, J. W. and Hendrickson, L. E, Thin Solid Films 271, 64 (1995)Google Scholar
7.Genin, F. Y. and Siekhaus, W. J., J. Appl. Phys. 79, 3560 (1996)Google Scholar
8.Yost, F. G., ScriptaMetall. 23, 1323 (1989)Google Scholar
9.Tice, W. and Slusser, G., J. Vac. Sci. Techonol. B 8, 106 (1990)Google Scholar
10.Korhonen, M. A., Paszkiet, C. A. and Li, C.-Y., J. Appl. Phys. 69, 8083 (1991)Google Scholar
11.Hu, S. M., Appl. Phys. Lett. 59, 2685 (1991)Google Scholar
13.Sinha, A. K. and Sheng, T. T., Thin Solid Films 48, 117 (1978)Google Scholar
14.Flinn, P. A., Gardner, D. S. and Nix, W. D., IEEE Trans. Elec. Dev. ED 34, 689 (1987)Google Scholar
15.Gardner, D. S. and Flinn, P. A., J. Appl. Phys. 67, 1831 (1990)Google Scholar
16.Jou, J.-H. and Chung, C.-S., Thin Solid Films 235, 149 (1993)Google Scholar
17.Volkert, C. A., Alofs, C. F. and Liefting, J. R., J. Mater. Res. 9, 1147 (1994)Google Scholar
20.Stoney, G. G., Proc. R. Soc. London, Ser. A 82, 172 (1909)Google Scholar
21.Townsend, P. H., Barnett, D. M. and Brunner, T. A., J. Appl. Phys. 62, 4438 (1987)Google Scholar
23.Kristensen, N., Ericson, F. and Schweitz, J.-A., Thin Solid Films 197, 67 (1991); J. Appl. Phys. 69, 2097 (1991)Google Scholar