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Thermal and Stress Modeling for the Flash Lamp Crystallization of Amorphous Silicon Films

Published online by Cambridge University Press:  01 February 2011

Mark Smith
Affiliation:
[email protected], University of Cambridge, Department of Engineering, Trumpington Street, Cambridge, Cambridgeshire, CB2 1PZ, United Kingdom
Richard A. McMahon
Affiliation:
[email protected], University of Cambridge, Department of Engineering, Trumpington Street, Cambridge, Cambridgeshire, CB2 1PZ, United Kingdom
Keith A. Seffen
Affiliation:
[email protected], University of Cambridge, Department of Engineering, Trumpington Street, Cambridge, Cambridgeshire, CB2 1PZ, United Kingdom
Dieter Panknin
Affiliation:
[email protected], Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Saxony, N/A, Germany
Matthias Voelskow
Affiliation:
[email protected], Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Saxony, N/A, Germany
Wolgang Skorupa
Affiliation:
[email protected], Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Saxony, N/A, Germany
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Abstract

Thin poly-crystalline silicon films are attractive for the fabrication of active matrix liquid crystal displays. We investigate the use of flash lamp annealing to crystallize amorphous silicon layers on glass substrates as a low cost manufacturing route. In this process amorphous silicon (a-Si) can be crystallized by solid phase crystallization (SPC) or in the super lateral growth (SLG) regime. We present a thermal model incorporating the phase transitions during annealing; providing a valuable tool for optimizing the process conditions. Another consideration is the evolution of stress resulting from the transient thermal loading of the substrate material. Results are presented for various substrate geometries and important scalability issues are addressed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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