Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-02T18:59:35.846Z Has data issue: false hasContentIssue false
  • English
  • Français

Theoretical and Experimental Analysis of the Low Dielectric Constant of Fluorinated Silica

Published online by Cambridge University Press:  17 March 2011

A. Demkov ,
S. Zollner ,
R. Liu ,
D. Werho ,
M. Kottke ,
R.B. Gregory ,
M. Angyal ,
S. Filipiak  and
G.B. Adams
A. Demkov
Affiliation:
Motorola Semiconductor Products Sector, Mesa, AZ
S. Zollner
Affiliation:
Motorola Semiconductor Products Sector, Mesa, AZ
R. Liu
Affiliation:
Motorola Semiconductor Products Sector, Mesa, AZ
D. Werho
Affiliation:
Motorola Semiconductor Products Sector, Mesa, AZ
M. Kottke
Affiliation:
Motorola Semiconductor Products Sector, Mesa, AZ
R.B. Gregory
Affiliation:
Motorola Semiconductor Products Sector, Mesa, AZ
M. Angyal
Affiliation:
Motorola Semiconductor Products Sector, Mesa, AZ
S. Filipiak
Affiliation:
Motorola Semiconductor Products Sector, Mesa, AZ
G.B. Adams
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ
Get access

Abstract

Fluorinated silica has a dielectric constant lower than that of F-free SiO2 and is a potential interlayer dielectric. We investigate the F-doped SiO2 with ab-initio modeling and various characterization techniques searching to explain the dielectric constant reduction. FTIR transmission and spectroscopic ellipsometry give us information about the ionic and electronic contributions to ε. Nuclear reaction analysis and Auger spectrometry measure F composition. XPS and FTIR provide information on the atomic structure of the film. We use several cells of cristobalite to model fluorinated silica using the electronic structure theory. The ground state geometry, vibrational density of states, electronic band structure, and Born effective charges are analyzed. The calculations suggest that it is the ionic component of the dielectric constant that is mostly effected by the F incorporation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D3.8.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lucovsky, G. and Yang, H., J. Vac. Sci. Technol. A 15, 1509 (1997).Google Scholar
2. Grill, A. et al. , in Low-Dielectric Constant Materials II, edited by Lagendijk, A., Treichel, H., Uram, K., and Jones, A. (Mater. Res. Soc., Pittsburgh, 1996), p. 155.Google Scholar
3. Zhao, D., Yang, P., Melosh, N., Feng, J., Chmelka, B.F., and Stucky, G.D., Adv. Mater. 10, 1380 (1998).10.1002/(SICI)1521-4095(199811)10:16<1380::AID-ADMA1380>3.0.CO;2-83.0.CO;2-8>Google Scholar
4. Yu, K.C. et al. , in Low-Dielectric Constant Materials V, Mater. Res. Soc. Proc. 565 (in print).Google Scholar
5. Wetzel, J. et al., in Low-Dielectric Constant Materials, edited by Lu, T.-M., Murarka, S.P., Kuan, T.-S., and Ting, C.H. (Mater. Res. Soc., Pittsburgh, 1995) p.217.Google Scholar
6. Han, S.M. and Aydil, E., J. Vac. Sci. Technol. A 15, 2893 (1997).10.1116/1.580845Google Scholar
7. Han, S.M. and Aydil, E., J. App. Phys. 83, 2172 (1998).10.1063/1.366955Google Scholar
8. Hasegawa, S., Tsukaoka, T., Inokuma, T., Kurata, Y., J. Non-Crystalline Solids 240, 154 (1998).10.1016/S0022-3093(98)00712-1Google Scholar
9. Xu, Y.-N. and Ching, W.Y., Phys. Rev. B 44, 11048 (1991).10.1103/PhysRevB.44.11048Google Scholar
10. Demkov, A.A., Ortega, J., Sankey, O.F., and Grumbach, M., Phys Rev. B 52, 1618 (1995).10.1103/PhysRevB.52.1618Google Scholar
11. Sankey, O.F., Demkov, A.A., Windl, W., Fritsch, J.H., Lewis, J.P., Fuentes-Cabrera, M., Int. J. Quant. Chem. 69, 327 (1998).10.1002/(SICI)1097-461X(1998)69:3<327::AID-QUA11>3.0.CO;2-#3.0.CO;2-#>Google Scholar
12. Kim, K., Kwon, D.H., Nallapati, G., and Lee, G.S., J. Vac. Sci. Technol. A 16, 1509 (1998).10.1116/1.581178Google Scholar
13. Yoshimary, M., Koizumi, S., and Shimokawa, K., J. Vac. Sci. Technol. A 15, 2908 (1997).10.1116/1.580884Google Scholar
14. Cerius2 software, Molecular Simulations, Inc., San Diego, CA. Google Scholar
15. Demkov, A., Liu, R., Zollner, S., Werho, D., Kottke, M., Gregory, R.B., Angyal, M., Filipiak, S., McIntyre, L.C., and Ashbaugh, M.D., Mat. Res. Soc. Symp. Proc. (in print).Google Scholar