Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-02T23:19:57.730Z Has data issue: false hasContentIssue false
  • English
  • Français

Textural Evolution of Cu Damascene Interconnects after Annealing

Published online by Cambridge University Press:  17 March 2011

Jae-Young Cho ,
Hyo-Jong Lee ,
Hyoungbae Kim  and
Jerzy A. Szpunar
Jae-Young Cho
Affiliation:
Department of Mining, Metals and Materials Engineering, McGill University, Montreal, Quebec, H3A 2B2, Canada
Hyo-Jong Lee
Affiliation:
School of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 151-744, Korea
Hyoungbae Kim
Affiliation:
Department of Mining, Metals and Materials Engineering, McGill University, Montreal, Quebec, H3A 2B2, Canada
Jerzy A. Szpunar
Affiliation:
Department of Mining, Metals and Materials Engineering, McGill University, Montreal, Quebec, H3A 2B2, Canada
Get access

Abstract

Textural evolution of Cu interconnects having a different line width was investigated after annealing. Texture was measured on the surface of Cu interconnects using EBSD (electron backscattered diffraction) techniques including GBCD (grain boundary character distribution). To analyze a relationship between the stress distribution and textural evolution in the samples investigated, the micro stresses were calculated for the different line width at 200°C using FEM (finite element modeling). In this investigation, it was found that the inhomogeneity of stress distribution in Cu interconnects is an important factor is necessary for understanding textural transformation after annealing. A new interpretation of textural evolution in damascene interconnects lines after annealing is suggested, based on the state of stress and the growth mechanisms of Cu electrodeposits.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F8.9
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Singer, P., Semicond. Int., 21, 91(1998).Google Scholar
2. Lee, K. T., Szpunar, J. A., Morawiec, A., Knorr, D. B. and Rodbell, K. P., Can. Metall. Quart., 34, 287 (1995).Google Scholar
3. Rosenberg, R., Edelstein, D.C., Hu, C.-K., and Rodbell, K.P., Annuu. Rev. Mater. Sci., 30, 229 (2000).Google Scholar
4. Lingk, C., Gross, M.E., Brown, W.L. and Drese, R., Solid State Technol., 42, 47 (1999).Google Scholar
5. Riege, S.P. and Thompson, C.V., Scripta Mater., 41, 403 (1999).Google Scholar
6. Lee, D.N. and Lee, H.J., J. Electron. Mater., 32, 1012 (2003).CrossRefGoogle Scholar
7. Josell, D., Wheeler, D., Huber, W.H. and Moffat, T.P., Phys. Rev. Lett., 87, 016102 (2001).CrossRefGoogle Scholar
8. Lingk, C., Gross, M.E. and Brown, W.L., Appl. Phys. Lett., 74, 682 (1999).Google Scholar
9. Zschech, E., Blum, W., Zienert, I. and Besser, P.R., Z. Metallkd., 92, 803 (2001).Google Scholar