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Ternary Group-III-Nitrides Grown in Movpe Production Reactors

Published online by Cambridge University Press:  10 February 2011

O. Schoen ,
H. Protzmann ,
M. Schwambera ,
B. Schineller ,
M. Heuken ,
D. Schmitz ,
G. Strauch  and
H. Juergensen
O. Schoen
Affiliation:
AIXTRON AG, Kackertstr. 15 - 17, D-52072 Aachen, GermanyTel: +49 (241) 89 09 - 0, Fax: +49 (241) 89 09 - 40; e-mail: [email protected]
H. Protzmann
Affiliation:
AIXTRON AG, Kackertstr. 15 - 17, D-52072 Aachen, GermanyTel: +49 (241) 89 09 - 0, Fax: +49 (241) 89 09 - 40; e-mail: [email protected]
M. Schwambera
Affiliation:
Institut fuer Halbleitertechnik, RWTH Aachen, Templergraben 55, D-52056 AachenTel: +49 (241) 80 77 45, Fax: +49 (241) 80 88 199; e-mail: [email protected]
B. Schineller
Affiliation:
Institut fuer Halbleitertechnik, RWTH Aachen, Templergraben 55, D-52056 AachenTel: +49 (241) 80 77 45, Fax: +49 (241) 80 88 199; e-mail: [email protected]
M. Heuken
Affiliation:
Institut fuer Halbleitertechnik, RWTH Aachen, Templergraben 55, D-52056 AachenTel: +49 (241) 80 77 45, Fax: +49 (241) 80 88 199; e-mail: [email protected]
D. Schmitz
Affiliation:
AIXTRON AG, Kackertstr. 15 - 17, D-52072 Aachen, GermanyTel: +49 (241) 89 09 - 0, Fax: +49 (241) 89 09 - 40; e-mail: [email protected]
G. Strauch
Affiliation:
AIXTRON AG, Kackertstr. 15 - 17, D-52072 Aachen, GermanyTel: +49 (241) 89 09 - 0, Fax: +49 (241) 89 09 - 40; e-mail: [email protected]
H. Juergensen
Affiliation:
AIXTRON AG, Kackertstr. 15 - 17, D-52072 Aachen, GermanyTel: +49 (241) 89 09 - 0, Fax: +49 (241) 89 09 - 40; e-mail: [email protected]
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Abstract

Using production scale AIXTRON MOCVD systems various heterointerfaces in the GaInN/GaN system have been studied in depth. GaInN single hetero layers were investigated to optimise photoluminescence properties. Several approaches of capping GaInN/GaN with another GaN layer to develop high quality double-hetero (DH) structures were presented. Using an optimised interfacing technique we obtain device quality DH structures with state of the art composition uniformity across a 2 inch wafer

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 125
Copyright
Copyright © Materials Research Society 1998

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References

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