Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-28T16:04:20.392Z Has data issue: false hasContentIssue false
  • English
  • Français

Temperature Dependence of Stresses and H Desorption in Porous Silicon

Published online by Cambridge University Press:  28 February 2011

Y. Diawara ,
J.F. Currie ,
A. Yelon ,
V. Petrova-Koch  and
A. Nikolov
Y. Diawara
Affiliation:
Ecole Polytechnique, Département de génie physique, Groupe des Couches Minces, C.P.6079, Succ. Centre-Ville, Montréal, Qc, Canada, H3C 3A7.
J.F. Currie
Affiliation:
Ecole Polytechnique, Département de génie physique, Groupe des Couches Minces, C.P.6079, Succ. Centre-Ville, Montréal, Qc, Canada, H3C 3A7.
A. Yelon
Affiliation:
Ecole Polytechnique, Département de génie physique, Groupe des Couches Minces, C.P.6079, Succ. Centre-Ville, Montréal, Qc, Canada, H3C 3A7.
V. Petrova-Koch
Affiliation:
Physik-Department E 16, Tech. Univ. Munchen, 8046 Garching, Germany.
A. Nikolov
Affiliation:
Physik-Department E 16, Tech. Univ. Munchen, 8046 Garching, Germany.
Get access

Abstract

The mechanical stress induced in as-prepared porous silicon is generally compressive. Upon thermal annealing, the stress shows hysteresis. Isothermal annealing reveals second-order kinetic processes for both the stress and hydrogen effusion. The correlations between the changes in stress and porous silicon composition and structure are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 555
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Canham, L.T, Appl. Phys. Lett. 57, 1046(1990)Google Scholar
2 Koshida, N. and Koyama, H., Japan. J.Appl. Phys, 30, 1221(1991)Google Scholar
3 Murayama, K., Miyazaki, S. and Hirose, M., Japan. J.Appl. Phys, 31,1358(1992)Google Scholar
4 Chen, X., Uttamchandani, D., Trager-Cowan, C. and K.P, O'Donnell, Semicond. Sci. Technol. 8, 92(1993)Google Scholar
5 Barla, K., Herino, R., Bomchil, G., Pfister, J.C. and Freund, A.. J. Cryst. Growth, 68,727(1984)Google Scholar
6 Diawara, Y., Currie, J. F. and Yelon, A., "Optical Properties of Low Dimensional silicon structures". Kluwer Academic Publishers, NATO Series E244, (1993) p.69. Edit. Bensahel, D.C..Google Scholar
7 Gruning, U. and Yelon, A., Thin Solid Films. in press.Google Scholar
8 Dolino, G. and Bellet, D., Thin Solid Films. in press.Google Scholar
9 Poulin, S., Diawara, Y., Currie, J.F., Yelon, A., Gujrathi, S.C. and Petrova-Koch, V., Mater. Res. Soc. Proc. Boston, 1992.Google Scholar
10 Sinha, A.K, Levenstein, H.J and Smith, T.E, J. Appl. Phys 49, 2423(1978)Google Scholar
11 Hoffman, R.W., in Measurement Techniques for Thin Films, Schwartz, B., Schwartz, N., eds., Electrochem. Soc. Inc., NY (1967), p. 312 Google Scholar
12 Zhang, Z., Qi, M., Chen, J. and Cheng, R. (1989), Jour. Non-Crystal. Soilds, 114, 510(1989).Google Scholar