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TEM Study on Defects in Epitaxial CdZnTe Films Deposited on (001)GaAs by Close-Spaced Sublimation

Published online by Cambridge University Press:  25 May 2012

Junning Gao ,
Wanqi Jie ,
Lin Luo ,
Yanyan Yuan ,
Tao Wang ,
Shouzhi Xi  and
Hui Yu
Junning Gao
Affiliation:
State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072, China.
Wanqi Jie
Affiliation:
State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072, China.
Lin Luo
Affiliation:
State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072, China.
Yanyan Yuan
Affiliation:
State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072, China.
Tao Wang
Affiliation:
State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072, China.
Shouzhi Xi
Affiliation:
State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072, China.
Hui Yu
Affiliation:
State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072, China.
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Abstract

A transmission electron microscopy (TEM) study on defects in a 30 μm-thick epitaxial CZT film deposited on (001)GaAs via close-spaced sublimation was performed. The epi-layer is of good quality without twins. Dislocations and stacking faults are mainly gathered near the interface. The dislocations are extrinsic either of Lomer edge or 60° type. Pseudo extrinsic stacking faults consisting of two independent and oppositely oriented extrinsic dislocations have been found both on the (111) and the planes. L-shaped defects originated from the interface have been discovered. The near-interface-side of L is consisted of 3 compressed (111) planes and the lateral side is consisted of 3-4 misarranged planes. This L-shaped defect is induced by the absence of a misfit dislocation at the intersection between L and the interface.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1432: Symposium G – “Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II” , 2012 , mrss12-1432-g04-08
Copyright
Copyright © Materials Research Society 2012

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References

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