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TEM Observation of Vacancy Clustering Process in FeAl Single Crystal

Published online by Cambridge University Press:  26 February 2011

Masafumi Tsunekane
Affiliation:
[email protected], Tohoku University, Graduate School of Environmental Studies, 6-6-02 Aramaki Aza-Aoba, Aoba-ku, Sendai, Miyagi, 980-8579, Japan, 81-22-795-7326, 81-22-795-7325
Kyosuke Yoshimi
Affiliation:
[email protected], Graduate School of Environmental Studies, Tohoku University, Sendai 980-8579, Japan
Kouichi Maruyama
Affiliation:
[email protected], Graduate School of Environmental Studies, Tohoku University, Sendai 980-8579, Japan
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Abstract

Nanoporous surfaces are formed in B2-type FeAl single crystals by quenching into iced water, followed by surface treatment and aging heat treatment. From our previous works, it was indicated that the nanoporous phenomenon is caused by the clustering of supersaturated thermal vacancies. In this study, the clustering process of supersaturated thermal vacancies was systematically investigated by transmission electron microscopy (TEM). An irreversible exothermic peak was detected for as-quenched specimens by differential scanning calorimetry (DSC). The isochronal changes of surface morphology and substructure around the exothermic peak temperature were clarified by TEM observation. The average size of the surface pores monotonously increased with increasing the temperature. Dislocations whose Burgerse vectors are parallel to <100> existed in the isochronally-heated single crystals, and its density was changed with heat treatment temperature. On the other hand, there was no dislocation zone from surface to the depth of several tens nanometers. A growth model of the surface pores is discussed

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Paris, D., Lesbats, P. and Levy, J., Scr. Metall. 9, 1373(1975)Google Scholar
2. Ho, K. and Dodd, R. A., Scr. Metall. 12, 1055(1978)Google Scholar
3. Paris, D. and Lesbats, P., J. Nucl. Mater. 69–70, 628(1978)Google Scholar
4. Chang, Y. A., Pike, L. M., Liu, C. T., Bilbrey, A. R. and Stone, D. S., Intermetallics 1, 107(1993)Google Scholar
5. Kogachi, M. and Haraguchi, T., Mater. Sci. Eng. A230, 124(1997)Google Scholar
6. Hehenkamp, T., Scholz, P., Köhler, B. and Kerl, R., Defect Diffusion Forum 194, 389(2001)Google Scholar
7. Haraguchi, T., Yoshimi, K., Kato, H. Hanada, S. and Inoue, A., Intermetallics 11, 707(2003)Google Scholar
8. Riviere, J. P. and Grilhe, J., Acta Metall. 20, 1275(1972)Google Scholar
9. Riviere, J. P., Zonon, H. and Grilhe, J., Phys. Stat. Sol. A16, 545(1973)Google Scholar
10. Würshum, R., Grupp, C. and Schaefer, H. E., Phys. Rev. Lett. 175, 97(1995)Google Scholar
11. Wu, D. and Baker, I., Phil. Mag. A82, 2239(2002)Google Scholar
12. Yoshimi, K., Hanada, S., Haraguchi, T., Kato, H., Itoi, T. and Inoue, A., Mater. Trans. 11, 2897(2002)Google Scholar
13. Yoshimi, K., Kobayashi, T., Yamauchi, A., Haraguchi, T. and Hanada, S., Philos. Mag. 85, 331(2005)Google Scholar
14. Yoshimi, K., Tsunekane, M., Nakamura, R., Yamauchi, A. and Hanada, S., Appl. Phys. Lett. 89, 073110(2006)Google Scholar
15. Yang, Y. and Baker, I., Mater. Res. Soc. Symp. Proc. 552, KK8.22.1(1999)Google Scholar
16. Zaroual, S., Sassi, O., Aride, J., Bernardini, J. and Moya, G., Mater. Sci. Eng. A279, 282(2000)Google Scholar
17. Baker, I. and Gaydosh, D. J., Phys. Stat. Sol. A96, 185(1986)Google Scholar
18. Feng, C. R. and Sadananda, K., Scr. Metall. Mater. 24, 2107(1990)Google Scholar
19. Morris, M. A., George, O. and Morris, D. G., Mater. Sci. Eng. A258, 99(1998)Google Scholar