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A Technique for the Measurement of d31 Coefficient of Piezoelectric Thin Films

Published online by Cambridge University Press:  10 February 2011

Joseph F. Shepard Jr ,
Paul J. Moses  and
Susan Trolier-McKinstry
Joseph F. Shepard Jr*
Affiliation:
Intercollege Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
Paul J. Moses
Affiliation:
Intercollege Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
Susan Trolier-McKinstry
Affiliation:
Intercollege Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
*
*[email protected]
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Abstract

This paper describes a new technique by which the d31 coefficient of piezoelectric thin films can be characterized. Silicon substrates coated with lead-zirconate titanate (PZT) are flexed while clamped in a uniform load rig. When stressed, the PZT film produces an electric charge which is monitored together with the change in applied load. The mechanical stress and thus the transverse piezoelectric coefficient can then be calculated. Experiments were conducted as a function of poling field strength and poling time. Results are dependent upon the value of applied stress, which itself is dependent upon the mechanical properties of the silicon substrate. Because the substrate is anisotropie, limiting d31 values were calculated. In general, d31 was found to be ∼20 pC/N for field strengths above 130 kV/cm and poling times of less than 1 minute, d31 was increased more than a factor of three, to ∼77 pC/N, when poled at 200 kV/cm for ∼21 hours.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 459: Symposium Y – Materials for Smart Systems II , 1996 , 225
Copyright
Copyright © Materials Research Society 1997

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References

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