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Synthesis of Ti2N-TiSi2 Layers by One-Step Excimer Laser Irradiation

Published online by Cambridge University Press:  25 February 2011

Giuseppe Majni ,
P. Mengucci ,
G. Barucca ,
G. Leggieri  and
A. Luches
Giuseppe Majni
Affiliation:
Università di Ancona, Dipartimento di Scienze dei Materiali e della Terra, Via Brecce Bianche, 1–60131 Ancona, Italy.
P. Mengucci
Affiliation:
Università di Ancona, Dipartimento di Scienze dei Materiali e della Terra, Via Brecce Bianche, 1–60131 Ancona, Italy.
G. Barucca
Affiliation:
Università di Ancona, Dipartimento di Scienze dei Materiali e della Terra, Via Brecce Bianche, 1–60131 Ancona, Italy.
G. Leggieri
Affiliation:
Università di Lecce, Dipartimento di Fisica, Via Arnesano, 1–73100 Lecce, Italy.
A. Luches
Affiliation:
Università di Lecce, Dipartimento di Fisica, Via Arnesano, 1–73100 Lecce, Italy.
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Abstract

In the present work a novel approach to suicide and nitride formation on the surface of silicon single crystals wafers is reported. The compound growth occurs directly in the place of interest as a result of a laser promoted chemical reaction. Results indicate that it is possible to obtain a titanium nitride layer superimposed on a titanium suicide film with a single-step laser irradiation process. The thickness of the suicide and nitride layers can be adjusted by a proper choice of the laser fluence and number of subsequent pulses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 679
Copyright
Copyright © Materials Research Society 1993

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References

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