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Synthesis of III-Nx-V1-x Thin Films by N Ion Implantation

Published online by Cambridge University Press:  21 March 2011

K. M. Yu ,
W. Walukiewicz ,
W. Shan ,
J. Wu ,
J. W. Beeman ,
J. W. Ager III ,
E. E. Haller  and
M. C. Ridgway
K. M. Yu
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
W. Walukiewicz
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
W. Shan
Affiliation:
OptiWork, Inc. Fremont, CA 94538
J. Wu
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
J. W. Beeman
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
J. W. Ager III
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
E. E. Haller
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
M. C. Ridgway
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia
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Abstract

Dilute III-Nx-V1-x alloys were successfully synthesized by nitrogen implantation in GaAs and InP. The fundamental band gap energy for the ion beam synthesized III-Nx-V1-x alloys was found to decrease with increasing N implantation dose in a manner similar to that commonly observed in epitaxially grown GaNxAs1-x and InNxP1-x thin films. The fraction of N occupying anion sites (“active” N) in the GaNxAs1-x layers formed by N implantation was thermally unstable and decreased with increasing annealing temperature. In contrast, thermally stable InNxP1-x alloys with N mole fraction as high as 0.012 were synthesized by N implantation in InP. Moreover, the N activation efficiency in InP was at least a factor of two higher than in GaAs under similar processing conditions. The low N activation efficiency (<20%) in GaAs can be improved by co-implanting Ga and N in GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 650: Symposium R – Microstructural Processes in Irradiated Materials-2000 , 2000 , R8.3/O13.3
Copyright
Copyright © Materials Research Society 2001

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