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Synthesis and size control of Si nanocrystals by SiO/SiO2 superlattices and Er doping

Published online by Cambridge University Press:  11 February 2011

J. Heitmann ,
D. Kovalev ,
M. Schmidt ,
L.X. Yi ,
R. Scholz ,
F. Eichhorn  and
M. Zacharias
J. Heitmann
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle, Germany
D. Kovalev
Affiliation:
Technische Universität München, Physik Department E16, D-85747 Garching, Germany
M. Schmidt
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle, Germany
L.X. Yi
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle, Germany
R. Scholz
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle, Germany
F. Eichhorn
Affiliation:
Forschungszentrum Rossendorf, Institut für Ionenstrahlphysik und Materialforschung, PO Box 510119, 01314 Dresden, Germany
M. Zacharias
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle, Germany
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Abstract

The synthesis of nc-Si by reactive evaporation of SiO and subsequent thermal induced phase separation is reported. The size control of nc-Si is realized by evaporation of SiO/SiO2 superlattices. By this method an independent control of crystal size and density is possible. The phase separation of SiO into SiO2 and nc-Si in the limit of ultrathin layers is investigated. Different steps of this phase separation are characterized by photoluminescence, infrared absorption and transmission electron microscopy measurements. The strong room temperature luminescence of nc-Si shows a strong blueshift of the photoluminescence signal from 850 to 750 nm with decreasing crystal size. Several size dependent properties of this luminescence signal, like decreasing radiative lifetime and increasing no-phonon transition properties with decreasing crystal size are in good agreement with the quantum confinement model. Er doping of the nc-Si shows an enhancement of the Er luminescence at 1.54 μm by a factor of 5000 compared to doped SiO2 layers. The decreasing transfer time for the nc-Si to Er transition with decreasing crystal size can be understood as additional proof of increasing recombination probability within the nc-Si for decreasing crystal size.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F1.6
Copyright
Copyright © Materials Research Society 2003

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References

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