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Synthesis and Properties of Al-Based Amorphous and Microcrystalline Thin Films

Published online by Cambridge University Press:  21 March 2011

Christoph Ettl ,
Lothar Berger ,
Joachim W. Mrosk  and
Hans-Jörg Fecht
Christoph Ettl
Affiliation:
Center for Micromaterials, Ulm University, Albert-Einstein-Allee 47, D-89081 Ulm, Germany
Lothar Berger
Affiliation:
Center for Micromaterials, Ulm University, Albert-Einstein-Allee 47, D-89081 Ulm, Germany
Joachim W. Mrosk
Affiliation:
Center for Micromaterials, Ulm University, Albert-Einstein-Allee 47, D-89081 Ulm, Germany
Hans-Jörg Fecht
Affiliation:
Center for Micromaterials, Ulm University, Albert-Einstein-Allee 47, D-89081 Ulm, Germany
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Abstract

Amorphous metal alloys are ideally suited for interconnects in micro-electromechanical sys- tems (MEMS) because of their resistance against stress- and electromigration, and their stability in chemically aggressive environments, which should both lead to a substantial improvement of lifetime and reliability of robust sensors. While amorphous refractory metal alloys and amor- phous silicides are excellent interconnect materials for devices operating at elevated tempera- tures, these systems lack the cost-effective and easy interconnect processing of the prevalent polycrystalline aluminum alloy metallizations. Amorphous aluminum alloys are applicable to devices operating at up to 200°C, and their stressmigration resistance and chemical stability is far superior to conventional polycrystalline aluminum alloys. These new metallizations are very promising for processing interconnects, in particular because of their high strength and ductility, though having low density, and their relatively low electrical resistivity compared to other amor- phous metal alloys. Therefore these metallizations are especially suited for surface acoustic wave (SAW) sensors, where the interconnects are exposed to considerable mechanical strains. In this work amorphous Aluminum Yttrium alloy thin film metallizations deposited on appropriate sub- strates at room temperature (R.T.) by ultra-high vacuum (UHV) electron beam evaporation will be presented, and their mechanical and electronic properties together with their temperature sta- bility will be investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 672: Symposium O – Mechanisms of Surface and Microstructure Evolution in Deposited Films and Film Structures , 2001 , O60.1
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Matthews, H. (ed.), Surface wave filters, (John Wiley & Sons, 1977).Google Scholar
2. Fischerauer, G., Surface Acoustic Wave Devices, Sensors 8 (VCH Weinheim, 1995).Google Scholar
3. Black, J. R., Mass Transport of Aluminum by Momentum Exchange with Conducting Elec- trons, Proc. 6th IEEE Symp. on Reliabilty in Physics, (1967), p148.Google Scholar
4. Schreiber, H. U., Activation Energies for the Different Electromigration Mechanisms in Aluminum, Solid State Electronics 24 (1981), p. 583.Google Scholar
5. Shih, W. C. and Greer, A. L., Electromigration Damage and Failure Distribution in Al-4 wt. % Cu Interconnects, J. Appl. Phys. 84 (5) (1998), p. 2551.Google Scholar
6. Shatzkes, M. and Lloyd, J. R., A Model for Conductor Failure Considering Diffusion Concur- rently with Electromigration, J. Appl. Phys. 59 (11) (1986), p. 3890.Google Scholar
7. Sanchez, J. E. and Morris, J. W., Microstructural Analysis of Electromigration-induced Voids and Hillocks, Mat. Res. Soc. Symp. Proc. 225 (1991), p. 53.Google Scholar
8. Mrosk, J. W., Ettl, C., Berger, L., Dabalà, P., Fecht, H. J., Fischerauer, G., Hornsteiner, J., Riek, K., Riha, E., Born, E., Werner, M., Dommann, A., Auersperg, J., Kieselstein, E., Michel, B., and Mucha, A., SAW Sensors for High Temperature Applications, Proc. 24th IEEE Industrial Electronics Soc., (1998), pp. 2386–2390.Google Scholar
9. Cho, J. and Thompson, C. V., Grain Size Dependence of Electromigration-Induced Failures in Narrow Interconnects, Appl. Phys. Lett. 54 (25) (1989), p. 2577.Google Scholar
10. Chisholm, M. F., Aaron, D. B., Wiley, J. D., and Perepezko, J. H., Electromigration Studies in Amorphous and Polycrystalline Alloys, Appl. Phys. Lett. 53 (2) (1988), pp. 102–103.Google Scholar
11. Inoue, A., Zhang, T., Kita, K., and Masumoto, T., Mechanical Strength, Thermal Stability and Electrical Resistivity of Aluminum-rare Earth Metal Binary Amorphous Alloys, Mat. Trans. JIM 30 (11) (1989), p. 870.Google Scholar
12. Berger, L., Mrosk, J. W., Ettl, C., Fecht, H. J., Flege, S., Hahn, H., and Wolff, U.: Properties of Amorphous AlCuY Metallizations, Proc. 25th IEEE Industrial Electronics Soc. (1999), pp. 46–49.Google Scholar
13. Klug, H. P. and Alexander, L., X-ray Diffraction Procedures for Polycrystalline and Amor- phous Materials (John Wiley & Sons, 1974).Google Scholar
14. Oliver, W. C. and Pharr, G. M., An Improved Technique for Determining Hardness and Elastic Modulus, J. Mater. Res. 7 (6) (1992), p. 1564.Google Scholar
15. Tsui, T. Y., Oliver, W. C., and Pharr, G. M., Nanoindentation of Soft Films on Hard Substrates, Mat. Res. Soc. Proc. 436 (1997), pp. 207–212.Google Scholar