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Synthesis and Electrical Property of VO2 (M) Nanorods

Published online by Cambridge University Press:  01 February 2011

W. Chen ,
L. Q. Mai ,
Y. Y. Qi ,
H. Yu  and
J. F. Peng
W. Chen*
Affiliation:
Institute of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 Hubei, P. R. China
L. Q. Mai
Affiliation:
Institute of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 Hubei, P. R. China
Y. Y. Qi
Affiliation:
Institute of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 Hubei, P. R. China
H. Yu
Affiliation:
Institute of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 Hubei, P. R. China
J. F. Peng
Affiliation:
Institute of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 Hubei, P. R. China
*
* E-mail: [email protected]
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Abstract

VO2 (M) nanorods have been synthesized and the morphology and structure of the sample were characterized by XRD, SEM, and HRTEM. The results show that for VO2 (M) nanorods, the transition temperature is 65 °C and the hysteresis loop width is 8 °C. The active energy of low temperature semiconducting phase is 0.2eV, which indicates that its Fermi energy level situates on the middle energy level of the forbidden-band. The doping of Mo6+ decreases its transition temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 848: Symposium FF – Solid-State Chemistry of Inorganic Materials V , 2004 , FF8.7
Copyright
Copyright © Materials Research Society 2005

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References

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