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Synthesis and Characterization of Cu-doped ZnO Film in Nanowire like Morphology Using Low Temperature Self-Catalytic Vapor-Liquid-Solid (VLS) Method

Published online by Cambridge University Press:  03 January 2013

Ratheesh R. Thankalekshmi ,
Samwad Dixit ,
In-Tae Bae ,
Daniel VanHart  and
A.C. Rastogi
Ratheesh R. Thankalekshmi
Affiliation:
Electrical and Computer Engineering Department, Binghamton University, State University of New York, Binghamton, NY-13902, U.S.A. Center for Autonomous Solar Power (CASP), Binghamton University, State University of New York, Binghamton, NY-13902, U.S.A.
Samwad Dixit
Affiliation:
Electrical and Computer Engineering Department, Binghamton University, State University of New York, Binghamton, NY-13902, U.S.A. Center for Autonomous Solar Power (CASP), Binghamton University, State University of New York, Binghamton, NY-13902, U.S.A.
In-Tae Bae
Affiliation:
Small Scale Systems Integration and Packaging Center, Binghamton University, State University of New York, Binghamton, NY-13902, U.S.A.
Daniel VanHart
Affiliation:
Center for Autonomous Solar Power (CASP), Binghamton University, State University of New York, Binghamton, NY-13902, U.S.A.
A.C. Rastogi
Affiliation:
Electrical and Computer Engineering Department, Binghamton University, State University of New York, Binghamton, NY-13902, U.S.A. Center for Autonomous Solar Power (CASP), Binghamton University, State University of New York, Binghamton, NY-13902, U.S.A.
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Abstract

Cu-doped ZnO film in nanowire structure is synthesized by a closed space flux sublimation and periodic oxidation method at ∼300°C over Si substrate. Oxidative process controlled selfcatalytic VLS mechanism is proposed for the film growth. X-ray diffraction pattern establishes that Cu-doped ZnO nanowires retain the crystallite structure of the wurtzite ZnO. TEM studies indicate single crystal character of the Cu-doped ZnO nanowires. Optical absorption analysis of Cu-doped ZnO nanowires defines two direct energy band gaps. The low energy band gap at 3.2eV is intrinsic to the Cu-doped ZnO material. The higher energy band gap at 3.5eV is attributed to the nanosize, mediated by strong forward scattering of light from the nanowires. Sharp photoluminescence in Cu-doped ZnO corresponding to near bandgap free exciton emission is observed and a redshift of ∼0.07 eV is consistent with the effect of Cu-doping. The visible emission band in both ZnO and Cu-doped ZnO shows a broad green emission band with Cu-substitution shifting the maximum visible luminescence towards the higher energy side.

Keywords

chemical vapor deposition (CVD) (deposition)nanostructurethin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium Z – Oxide Semiconductors and Thin Films , 2013 , pp. 37 - 42
Copyright
Copyright © Materials Research Society 2012 

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References

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