Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-08T01:21:47.021Z Has data issue: false hasContentIssue false
  • English
  • Français

Surfactant-Mediated Growth of MnSi1.7 on Si(001)

Published online by Cambridge University Press:  17 March 2011

S. Teichert ,
H. Hortenbach ,
D. K. Sarkar ,
G. Beddies  and
H.-J. Hinneberg
S. Teichert
Affiliation:
Institute of Physics, Chemnitz University of Technology D-09107 Chemnitz, Germany
H. Hortenbach
Affiliation:
Institute of Physics, Chemnitz University of Technology D-09107 Chemnitz, Germany
D. K. Sarkar
Affiliation:
Institute of Physics, Chemnitz University of Technology D-09107 Chemnitz, Germany
G. Beddies
Affiliation:
Institute of Physics, Chemnitz University of Technology D-09107 Chemnitz, Germany
H.-J. Hinneberg
Affiliation:
Institute of Physics, Chemnitz University of Technology D-09107 Chemnitz, Germany
Get access

Abstract

The formation of the silicide MnSi1.7 by reactive deposition of Mn onto Si(001) has been studied using Sb as a surfactant. The growth was performed under UHV conditions by simultaneous or consecutive exposure of the Si substrates, held at high temperatures (550°C, 600 °C), to a flux of Sb and Mn atoms. The presence of Sb during the growth strongly increases the island density and changes the crystalline orientation of the MnSi1.7 grains. The morphology and the orientation of the resulting silicide are the same both for the deposition of Mn on a Sb terminated Si(001) surface and for the co-deposition of Mn and Sb on Si(001). A residual Sb coverage close to one monolayer (ML) at the sample surface has been determined for both of the preparation modes at Tsub = 550 °C. The transition from the growth mode without Sb to the surfactant-controlled growth has been studied for Tsub = 600 °C. It has been found that the silicide morphology and orientation strongly depend on the thickness of Sb pre-coverage, which was increased from 0 to about 0.7 ML (1 ML = 6.78·1014 atoms cm-2).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P11.34
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Copel, M., Reuter, M. C., Kaxiras, E., Tromp, R. M., Phys. Rev. Lett. 63, 632 (1989).Google Scholar
2.Copel, M., Reuter, M. C., Hoegen, M. Horn von, Tromp, R. M., Phys. Rev. B42, 11682 (1990).Google Scholar
3.Osten, H.J., Bugiel, E., Klatt, J., Appl. Phys. Lett. 61, 1918 (1992).Google Scholar
4.Kahng, S-J., Park, J. Y., Booth, K.H., Lee, J., Khang, Y., Kuk, Y., J. Vac. Sci. Technol. A15, 927 (1997).Google Scholar
5.Falta, J., Schmidt, T., Hille, A., Materlik, G., Phys. Rev. B54, R1728 (1996).Google Scholar
6.Schwomma, O., Nowotny, H., Wittmann, A., Monatsh. Chemie 94, 681 (1963).Google Scholar
7.Flicher, H., Völlenkle, H., Nowotny, H., Monatsh. Chemie 98, 2173 (1967).Google Scholar
8.Knott, H.W., Mueller, M.H., Heaton, L., Acta Cryst. 23, 549 (1967).Google Scholar
9.Ridder, R. de, Amelinckx, S., Mat. Res. Bull. 6, 1223 (1971).Google Scholar
10.Viniing, C.B., Proc. IX Int. Conf. Thermoelectrics, California Institute of Technology, Pasadena (1991) p.249.Google Scholar
11.Reader, A.H., Duchateau, J.P.W.B., Crombeen, J.E., Semicond. Sci. Technol. 8, 1204 (1993).Google Scholar
12.Properties of Metal Silicides, eds. Maex, K., Rossum, M.v., INSPEC, London, U.K.,(1995).Google Scholar
13.Barnett, S.A., Winters, H.F., Greene, J.E., Surf. Sci. 165, 303 (1986).Google Scholar
14.Calculation was performed with the program CaRIne Crystallography 3.1.Google Scholar