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Surfaces and Interfaces for Controlled Defect Engineering

Published online by Cambridge University Press:  01 February 2011

Edmund G. Seebauer
Edmund G. Seebauer*
Affiliation:
[email protected], University of Illinois, Chemical & Biomolecular Engineering, 600 S Mathews Ave, 114 RAL, Box c3, Urbana, IL, 61801, United States, 217-244-9214
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Abstract

The behavior of point defects within silicon can be changed significantly by controlling the chemical state at the surface. In ultrashallow junction applications for integrated circuits, such effects can be exploited to reduce transient enhanced diffusion, increase dopant activation, and reduce end-of-range damage.

Keywords

defectsSisemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1070: Symposium E – Doping Engineering for Front-End Processing , 2008 , 1070-E01-07
Copyright
Copyright © Materials Research Society 2008

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References

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