Hostname: page-component-745bb68f8f-hvd4g Total loading time: 0 Render date: 2025-02-04T15:08:08.263Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Studies of Silicon with a High Resolution Transmission Electron Microscope

Published online by Cambridge University Press:  28 February 2011

J.M. Gibson ,
M.L. McDonald ,
F.C. Unterwald ,
H.-J. Gossmann ,
J.C. Bean  and
R.T. Tung
J.M. Gibson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
M.L. McDonald
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
F.C. Unterwald
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
H.-J. Gossmann
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J.C. Bean
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
R.T. Tung
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
Get access

Abstract

Using a specially modified ultra-high vacuum, ultra-high resolution transmission electron microscope, in-situ cleaned Si surfaces have been examined with near atomic resolution. By annealing the edges of a <110> thin Si specimen in-situ, it is found that low energy surfaces form. A surprising observation is that the {113} surface is stable and reconstructed by dimerization to a very low dangling bond density. It is also found that a 7×7 surface peridoicity can be preserved at a buried Si < 111 > / amorphous Si interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 39
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)