Hostname: page-component-6587cd75c8-2cm9h Total loading time: 0 Render date: 2025-04-24T00:03:06.714Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Reconstructions of Strained Epitaxial CoSi2/Si(100) Layers Studied by Scanning Tunneling Microscopy.

Published online by Cambridge University Press:  21 February 2011

R. Stalder ,
C. Schwarz ,
H. Sirringhaus  and
H. VON Känel
R. Stalder
Affiliation:
Laboratorium für Festkörperphysik, Eidgenössische Technische Hochschule Zürich, 8093 Zürich, Switzerland
C. Schwarz
Affiliation:
Laboratorium für Festkörperphysik, Eidgenössische Technische Hochschule Zürich, 8093 Zürich, Switzerland
H. Sirringhaus
Affiliation:
Laboratorium für Festkörperphysik, Eidgenössische Technische Hochschule Zürich, 8093 Zürich, Switzerland
H. VON Känel
Affiliation:
Laboratorium für Festkörperphysik, Eidgenössische Technische Hochschule Zürich, 8093 Zürich, Switzerland
Get access

Abstract

Epitaxial single-domain CoSi2(100) layers were grown on Si(100) by use of a template technique. In-situ scanning tunneling microscopy (STM) and reflection high energy electron diffraction (RHEED) were used for a detailed surface study. The (√2×√2)R45 reconstruction of the Co-rich “C-surface” and the (3√2×√2)R45 as well as a newly discovered (√2×√2)R45 of the Si-rich “S-surface” were resolved in real space and are discussed in detail. The transition from the C- to the S-surface above 500 °C is related to a (2×2) reconstruction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 499
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Mattheiss, L.F. and Hamann, D.R., Phys. Rev. B 37, 10623, (1988)Google Scholar
[2] Rosencher, E., Delage, S., Arnaud D'Avitaya, F., D'Anterroches, C., Belhaddad, K. and Pfister, J.C., Physica 134 B. 106, (1985)Google Scholar
[3] Hunt, B.D., Lewis, N., Hall, E.L., Turner, L.G., Schowalter, L.J., Okamoto, Masako and Hashimoto, Shin, Mat. Res. Soc. Symp. Proc. 56, 151 (1986)CrossRefGoogle Scholar
[4] von Känel, H., Henz, J., Ospelt, M. and Wachter, P., Phys. Scripta T 19, 158, (1987)Google Scholar
[5] Tung, R.T. and Batstone, J.L., Appl. Phys. Lett. 52, 648, (1988)Google Scholar
[6] Tung, R. T. and Schrey, F., Mat. Res. Soc. Symp. Proc. 122, 559, (1988); Appl. Phys. Lett. 54, 852, (1989); 55, 256, (1989)CrossRefGoogle Scholar
[7] A recent review of the growth of Ni and Co suicides on Si(111) has been given by H. von Känel, Mat. Sci. Repts. (in press)Google Scholar
[8] Bulle-Lieuwma, C.W.T., van Ommen, A.H. and Hornstra, J., Mat. Res. Soc. Symp. Proc. 102, 377, (1988)Google Scholar
[9] Yalisove, S.M., Tung, R.T. and Batstone, J.L., Mat. Res. Soc. Symp. Proc. 116 439, (1988)Google Scholar
[10] Yalisove, S.M., Tung, R.T. and Loretto, D., J. Vac. Sci. Technol. A 7, 1472, (1989)Google Scholar
[11] Tung, R.T., Schrey, F. and Yalisove, S.M., Appl. Phys. Lett. 55, 2005, (1989)Google Scholar
[12] Schowalter, L.J., Jimenez, J.R., Hsiung, L.M., Rajan, K., Hashimoto, Shin, Thompson, R.D. and Iyer, S.S., J. of Cryst. Growth 111, 948, (1991.)Google Scholar
[13] Jimenez, J.R., Hsiung, L.M., Rajan, K. and Schowalter, L.J., Appl. Phys. Lett. 57, 2811, (1990)Google Scholar
[14] Hellmann, F., Tung, R.T., Phys. Rev. B 37, 10786, (1988)Google Scholar
[15] Gallego, J.M., Miranda, R., Molodtsov, S., Laubschat, C. and Kaindl, G., Surf. Sci. 239, 203, (1990)Google Scholar
[16] Castro, G., Hulse, J.E., Küppers, J. and Rodriguez Gonzalez-Elipe, A., Surf. Sci. 117, 621.(1982)Google Scholar
[17] Stalder, R., Onda, N., Sirringhaus, H., von Känel, H. and Bulle-Lieuwma, C.W.T., J. Vac. Sci. Technol. B 9, 2307, (1991)Google Scholar