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Surface Properties of GaAs Passivated With (NH4)2Sx Solution

Published online by Cambridge University Press:  15 February 2011

Kyung-Soo Suh ,
Hyung-Ho Park ,
Jong-Lam Lee ,
Haechon Kim ,
Kyung-Ik Cho  and
Kyung-Soo Kim
Kyung-Soo Suh
Affiliation:
Semiconductor Technology Division, ETRI, Yusung P.O. Box 106, Taejon, 305-600, KOREA
Hyung-Ho Park
Affiliation:
Dept. of Ceramic Engineering, Yonsei University 134, Shinchon-dong, Sudaemoon-ku, SEOUL, 120-749, KOREA
Jong-Lam Lee
Affiliation:
Semiconductor Technology Division, ETRI, Yusung P.O. Box 106, Taejon, 305-600, KOREA
Haechon Kim
Affiliation:
Semiconductor Technology Division, ETRI, Yusung P.O. Box 106, Taejon, 305-600, KOREA
Kyung-Ik Cho
Affiliation:
Semiconductor Technology Division, ETRI, Yusung P.O. Box 106, Taejon, 305-600, KOREA
Kyung-Soo Kim
Affiliation:
Semiconductor Technology Division, ETRI, Yusung P.O. Box 106, Taejon, 305-600, KOREA
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Abstract

Surface properties of GaAs passivated with (NH4)2Sx solution have been compared with HCl-treated GaAs using X-ray photoelectron spectroscopy, Sulfur treatment on GaAs surface results in the formation of S-Ga and S-As bonds, which remain after successive rinsing for I minute in DI water. The evolution of Ga 2p3 and As 3d peaks in the sulfidation treated GaAs was monitored with the exposing time to air. After 10 days exposure to air, the Ga-O and As-O bonds slightly increased, but maintained almost constant for further exposure. The increase of Ga-O and As-O bonds induces the partial decomposition of sulfur bonds. Decomposition and evaporation behaviors of sulfur and oxygen were observed through the heat treatment of sulfidation treated GaAs under ultra high vacuum (less than l × 10-9 torr). After anneal at 350 – 450 °C, slight decrease of sulfur and oxygen due to the decomposition of As-O bond were observed. No more sulfur was found after anneal at 550 – 650 °C, where the decomposition of Ga-O bond was completed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 333
Copyright
Copyright © Materials Research Society 1995

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References

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