Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-28T11:36:05.696Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Morphologies and Optical Properties of Homoepitaxial ZnO Grown by Close-Spaced Chemical Vapor Transport

Published online by Cambridge University Press:  01 February 2011

Koji Abe ,
Tetsuya Tokuda ,
Yuta Banno  and
Osamu Eryu
Koji Abe
Affiliation:
[email protected], Nagoya Institute of Technology, Department of Electrical and Electronic Engineering, Gokiso Showa, Nagoya, 466-8555, Japan
Tetsuya Tokuda
Affiliation:
[email protected], Nagoya Institute of Technology, Department of Electrical and Electronic Engineering, Gokiso, Showa, Nagoya, 466-8555, Japan
Yuta Banno
Affiliation:
[email protected], Nagoya Institute of Technology, Department of Electrical and Electronic Engineering, Gokiso, Showa,, Nagoya, 466-8555, Japan
Osamu Eryu
Affiliation:
[email protected], Nagoya Institute of Technology, Department of Electrical and Electronic Engineering, Gokiso, Showa, Nagoya, 466-8555, Japan
Get access

Abstract

Chemical vapor transport (CVT) using carbon as a transporting agent is studied for homoepitaxial growth on O-polar ZnO substrates. To increase growth rate at high temperatures, we keep a substrate close to ZnO source powder. Surface smoothness and crystal quality of epilayers are remarkably improved by increasing a substrate temperature. Smooth surfaces are observed on the epilayer grown at substrate temperatures above 920°C.

Keywords

semiconductingoxidefilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1012: Symposium Y – Thin-Film Compound Semiconductor Photovoltaics-2007 , 2007 , 1012-Y03-25
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Makino, T., Chia, C. H., Tuan, N. T., Segawa, Y., Kawasaki, M., Ohtomo, A., Tamura, K., and Koinuma, H., Appl. Phys. Lett. 76, 3549 (2000).Google Scholar
2. Matsui, H., Saeki, H., Kawai, T., Sasaki, A., Yoshimoto, M., Tsubaki, M., and Tabata, H., J. Vac. Sci. Technol. B 22, 2454 (2004).Google Scholar
3. Abe, T., Kashiwaba, Y., Onodera, S., Masuoka, F., Nakagawa, A., Endo, H., Niikura, I., and Kashiwaba, Y., J. Cryst. Growth 298, 457 (2007).Google Scholar
4. Matsumoto, K. and Noda, K., J. Cryst. Growth 102, 137 (1990).Google Scholar
5. Ntep, J.-M., Hassani, S. Said, Lusson, A., Tromson-Carli, A., Ballutaud, D., Didier, G., and Triboulet, R., J. Cryst. Growth 207, 30 (1999).Google Scholar
6. Teke, A., Özgür, Ü., Dogan, S., Gu, X., and Morkoç, H., Nemeth, B. and Nause, J., Everitt, H. O., Phys. Rev. B 70, 195207 (2004).Google Scholar