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Surface Modification of Silicon Nano Mechanical Structures by Carbon Ion Implantation for Post-fabrication Transformation to Silicon Carbide

Published online by Cambridge University Press:  26 February 2011

Kumar R Virwani ,
Dinesh K Sood ,
Robert G Elliman  and
Ajay P Malshe
Kumar R Virwani
Affiliation:
[email protected], University of Arkansas, Department of Microelectronics Photonics, United States
Dinesh K Sood
Affiliation:
[email protected], Royal Melbourne Institute of Technology (RMIT), School of Electrical and Computer Engineering, Australia
Robert G Elliman
Affiliation:
[email protected], Australian National University, Department of Electronic Materials Engineering, Australia
Ajay P Malshe
Affiliation:
[email protected], University of Arkansas, Department of Mechancial Engineering, United States
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Abstract

Internal stresses can cause de-lamination and fracture of coatings and structures and it is well known that ion-implantation can be used to control such behavior through modification of the stress. Here, however, we show that the unique ability of implantation to create controlled stresses in materials by altering both the chemical composition and mechanical properties, combined with an increase in the bending strength of materials, can used to create novel vertical nanostructures. Silicon cantilevers (beams), 193nm thick, 200nm wide and 3μm long, were implanted with carbon ions to create a buried SiCx layers. The internal stresses generated by implantation caused the beams to bend at angles ranging from 10 degrees to greater than 90 degrees, leading to unique vertical nanostructures. This method can be used to create 3-D nano electromechanical systems (NEMS).

Keywords

ion-beam processingnanostructurealloy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 908: Symposium OO – Growth, Modification, and Analysis by Ion Beams at the Nanoscale , 2005 , 0908-OO16-03
Copyright
Copyright © Materials Research Society 2006

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