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Surface Effects in Silicon Doping with Boron During Proximity Rapid Thermal Diffusion

Published online by Cambridge University Press:  15 February 2011

S. Mone ,
W. Zagozdzon-Wosik  and
M. Rastogi
S. Mone
Affiliation:
Electrical and Computer Engineering, University of Houston 4800 Calhoun Rd., Houston, Texas 77204
W. Zagozdzon-Wosik
Affiliation:
Electrical and Computer Engineering, University of Houston 4800 Calhoun Rd., Houston, Texas 77204
M. Rastogi
Affiliation:
Electrical and Computer Engineering, University of Houston 4800 Calhoun Rd., Houston, Texas 77204
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Abstract

We investigated effects of surface preparation in doping silicon wafers using proximity rapid thermal diffusion (RTD). This process uses a spin-on-dopant (SOD) as an evaporating source for doping processed wafers. Various cleaning processes were used to study formation of the dopant glass on the silicon wafers during RTD. Doping was evaluated by sheet resistance measurements, dopant profiling using SIMS analyses, carrier distributions using spreading resistance profiling (SRP) or anodic oxidation, and was complemented by the composition analyses of the SOD deposited on the source wafers and of the dopant glass formed on the target wafers using Fourier Transform Infrared Spectroscopy (FTIR) in the transmission and reflection modes, respectively. It was found that the influence of the cleaning steps is much stronger in low temperature doping processes than at high temperatures. In addition, the temperature effect related to the wafer size was also an important factor in determining the doping efficiency in this RTDs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 351
Copyright
Copyright © Materials Research Society 1996

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