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Superconducting and Normal State Properties of Organic Metals β- (Bedt-Ttf)2X

Published online by Cambridge University Press:  25 February 2011

M. Tokumoto ,
N. Kinoshita ,
K. Murata ,
H. Bando  and
H. Anzai
M. Tokumoto
Affiliation:
Electrotechnical Laboratory, Tsukuba, Ibaraki 305, Japan
N. Kinoshita
Affiliation:
Electrotechnical Laboratory, Tsukuba, Ibaraki 305, Japan
K. Murata
Affiliation:
Electrotechnical Laboratory, Tsukuba, Ibaraki 305, Japan
H. Bando
Affiliation:
Electrotechnical Laboratory, Tsukuba, Ibaraki 305, Japan
H. Anzai
Affiliation:
Electrotechnical Laboratory, Tsukuba, Ibaraki 305, Japan
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Abstract

Recent progress on the superconducting and normal state properties characteristic to the organic metals β-(BEDT-TTF)2X are presented. Out of a systematic study on the β-(BEDT-TTF)2X salts, including β-(BEDT-TTF)2 trihalide mixed crystals, with the superconducting transition temperature (Tc) varying from 8 K to below 1 K, empirical rules for various factors governing the Tc in this class of organic metals have been extracted. In addition to the low- and high-Tc states, with Tc=l K and 8 K, respectively, a new superconducting state with Tc=2 K was found in α-(BEDT-TTF)2I3. A particular attention is paid for the correlation between Tc and resistivity. In addition, a correlation between Tc and the anisotropy of coherence length is also considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 173: Symposium Q – Advanced Organic Solid State Materials , 1989 , 107
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Emge, T.J., Leung, P.C.W., Beno, M.A., Schultz, A.J., Wang, H.H., Soma, L.M. and Williams, J.M., Phys. Rev. B30, 6780 (1984).Google Scholar
2. Leung, P.C.W., Emge, T.J., Beno, M.A., Wang, H.H., Williams, J.M., Petricek, V. and Coppens, P., J. Am. Chem. Soc., 107. 6184 (1985)Google Scholar
3. Williams, J.M., Wang, H.H., Emge, T.J., Geiser, U., Beno, M.A., Leung, P.C.W., Carlson, K.D., Thorn, R.J., Schultz, A.J. and Wangbo, M. -H., Prog. Inorg. Chem., 35, 51 (1987).Google Scholar
4. Leung, P.C.W., Emge, T.J., Schultz, A.J., Beno, M.A., Carlson, K.D., Wang, H.H., Firestone, M.A. and Williams, J.M., Solid State Commun., 57, 93 (1986)Google Scholar
5. Williams, J.M., Emge, T.J., Wang, H.H., Beno, M.A., Copps, P.T., Hall, L.N., Carlson, K.D. and Crabtree, G.W., Inorg. Chem., 21, 3839 (1984).Google Scholar
6. Wang, H.H., Beno, M.A., Geiser, U., Firestone, M.A., Webb, K.S., Nunez, L., Crabtree, G.W., Carlson, K.D., Williams, J.M., Azevedo, L.J., Kwak, J.F. and Schirber, J.E., Inorg. Chem., 24, 2465 (1985).Google Scholar
7. Kobayashi, H., Kato, R., Kobayashi, A., Saito, G., Tokumoto, M., Anzai, H. and Ishiguro, T., Chem. Lett., 1985. 1293.CrossRefGoogle Scholar
8. Tokumoto, M., Bando, H., Murata, K., Anzai, H., Kinoshita, N., Kajimura, K., Ishiguro, T. and Saito, G., Synthetic Metals, 13, 9 (1986).Google Scholar
9. Anzai, H., Tokumoto, M., Takahashi, K. and Ishiguro, T., J. Cryst. Growth, 91, 225(1988).Google Scholar
10. Tokumoto, M., Anzai, H., Murata, K., Kajimura, K. and Ishiguro, T., Synth. Metals, 27, A251 (1988)Google Scholar
11. Tokumoto, M., Anzai, H., Murata, K., Kajimura, K. and Ishiguro, T., Jpn. J. Appl. Phys., 26 -S3. 1977 (1987)Google Scholar
12. Hasegawa, Y. and Fukuyama, H., J. Phys. Soc. Jpn., 55, 4265 (1986).Google Scholar
13. Hamzic, B., Creuzet, G. and Lenoir, C., Europhys. Lett., 3, 373 (1987).Google Scholar
14. Creuzet, F., Creuzet, G., Jerome, D., Schweitzer, D. and Keller, H.J., J. Phys.(Paris) Lett., 46, L-1097 (1985).Google Scholar
15. Ginodman, V.B., Gudenko, A.V., Zasavitskii, I.I. and Yagubskii, E.B., JETP Lett., 42, 472 (1985).Google Scholar
16. Ginodman, V.B., Gudenko, A.V., Zherikhina, L.N., Laukhin, V.N., Yagubskii, E.B., Kononovich, P.A. and Shegolev, I.F., Acta Polymerica 39, 533 (1988).Google Scholar
17. Kagoshima, S., Nogami, Y., Hasumi, M., Anzai, H., Tokumoto, M., Saito, G. and Mori, N., Solid State Commun., 69, 1177 (1989).Google Scholar
18. Kagoshima, S., Hasumi, M., Nogami, Y., Kinoshita, N., Anzai, H., Tokumoto, M. and Saito, G., Solid State Commun., 71, 843 (1989).Google Scholar
19. Tokumoto, M., Yamaguchi, Y., Kinoshita, N. and Anzai, H., in Proc. 1st ISSP Symposium on the Physics and Chemistry of Organic Superconductors (Springer-Verlag, to be published)Google Scholar
20. Sasaki, T., Toyota, N., Hasumi, M., Osada, T., Kagoshima, S., Anzai, H., Tokumoto, M. and Kinoshita, N., J. Phys. Soc. Jpn., 58, 3477 (1989).Google Scholar
21. Venturini, E.L., Schirber, J.E., Wang, H.H. and Williams, J.M., Synth. Metals, 27, A243 (1988).CrossRefGoogle Scholar
22. Hurdequint, H., Creuzet, F. and Jerome, D., Synth. Metals, 27, A183 (1988).Google Scholar
23. Sasaki, T., Toyota, N., Hasumi, M., Osada, T., Kagoshima, S., Tokumoto, M., Kinoshita, N. and Anzai, H., in Proc. 1st ISSP Symposium on the Physics and Chemistry of Organic Superconductors (Springer-Verlag, to be published)Google Scholar
24. Murata, K., Tokumoto, M., Anzai, H., Bando, H., Kajimura, K., Ishiguro, T. and Saito, G., Synth. Metals, 13, 3 (1986)Google Scholar
25. Murata, K., Tokumoto, M., Anzai, H., Bando, H., Kajimura, K., Ishiguro, T. and Saito, G., Synth. Metals, 19, 151 (1987).Google Scholar
26. Tokumoto, M., Bando, H., Anzai, H., Saito, G., Murata, K., Kajimura, K. and Ishiguro, T., J. Phys. Soc. Jpn., 54, 869 (1985).Google Scholar
27. Tokumoto, M., Anzai, H., Bando, H., Saito, G., Kinoshita, N., Kajimura, K. and Ishiguro, T., J. Phys. Soc. Jpn., 54, 1669 (1985).Google Scholar
28. Tokumoto, M., Murata, K., Bando, H., Anzai, H., Saito, G., Kajimura, K. and Ishiguro, T., Solid State Commun., 54, 1031 (1985).CrossRefGoogle Scholar
29. Tokumoto, M., Researches of the Electrotechnical Laboratory, No. 892 (1988).Google Scholar