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Sublimation Growth of Aluminum Nitride-Silicon Carbide Alloy Crystals on SiC (0001) Substrates

Published online by Cambridge University Press:  01 February 2011

Z. Gu ,
J.H. Edgar ,
E.A. Payzant ,
H.M. Meyer ,
L.R. Walker ,
A. Sarua  and
M. Kuball
Z. Gu
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506, USA
J.H. Edgar
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506, USA
E.A. Payzant
Affiliation:
High Temperature Materials Laboratory, Oak Ridge National Laboratory, Oak Ridge, TN 37831–6064
H.M. Meyer
Affiliation:
High Temperature Materials Laboratory, Oak Ridge National Laboratory, Oak Ridge, TN 37831–6064
L.R. Walker
Affiliation:
High Temperature Materials Laboratory, Oak Ridge National Laboratory, Oak Ridge, TN 37831–6064
A. Sarua
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, UK
M. Kuball
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, UK
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Abstract

Thick (up to 1 mm) AlN-SiC alloy crystals were grown on off-axis Si-face 6H-SiC (0001) substrates by the sublimation-recondensation method from a mixture of AlN and SiC powders at 1860–1990 °C in a N2 atmosphere. The color of the crystals changed from clear to dark green with increasing growth temperature. Raman spectroscopy and x-ray diffraction (XRD) confirmed an AlN-SiC alloy was formed with the wurtzite structure and good homogeneity. Three broad peaks were detected in the Raman spectra, with one of those related to an AlN-like and another one to a SiC-like mode, both shifted relative to their usual positions in the binary compounds, and the third broad peak with possible contributions from both AlN and SiC. Scanning Auger microanalysis (SAM) and electron probe microanalysis (EPMA) demonstrated the alloy crystals had an approximate composition of (AlN)0.75(SiC)0.25 with a stoi chiometric ratio of Al:N and Si:C. The substrate mi sorientati on ensured a two-dimensional growth mode confirmed by scanning electron microscopy (SEM).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E3.1
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Dmitriev, V.A., Springer Proceedings in Physics 56, 3 (1992).Google Scholar
2. Kern, R.S., Rowland, L.B., Tanaka, S., and Davis, R.F., J. Mater. Res. 8 (7), 1477 (1993).Google Scholar
3. Beesabathina, D.P., Fekade, K., Wongchotigul, K., Spencer, M.G., and Salamanca-Riba, L., Mat. Res. Soc. Symp. Proc. 339, 363 (1994).Google Scholar
4. Wongchotigul, K., Spencer, M.G., Chen, N., Zhang, D., Fekade, K., Gomez, A., Thomas, C., Dimitriev, V., and Irvine, K., Inst. Phys. Conf. Ser. 137, 397 (1993).Google Scholar
5. Dmitriev, V.A., Elfimov, L.B., Lin'kov, I.Yu, Morozenko, Ya.V., Nikitina, I.P., Chelnokov, V.E., Cherenkov, A.E., and Chernov, M.A., Springer Proceedings in Physics 71, 101 (1992).Google Scholar
6. Ofitservoa, N.V., Kurbanov, M.K., Nikitina, I.P., Sorokin, N.D., Safaraliev, G.K., Tairov, Yu.M., and Tsvetkov, V.F., Neorganicheskie Materialy 28 (9), 2011 (1991).Google Scholar
7. Truschin, Yu.V., Yankov, R.A., Kharlamov, V.S., Kulikov, D.V., Tsigankov, D.N., Kreissig, U., Voelskow, M., Pezoldt, J., and Skorupa, W., Materials Science Forum 264–268, 757 (1998).Google Scholar
8. Interrante, L.V., Czekaj, C.L., Hackney, M.L.J., Sigei, G.A., Schieids, P.J., and Slack, G.A., Mat. Res. Soc. Symp. Proc. 121, 465 (1988).Google Scholar
9. Safaraliev, G.K., Tairov, Yu.M., Tsvetkov, V.F., Sov. Phys. Semicond. 25 (8), 865 (1991).Google Scholar
10. Dmitriev, V., Cherenkov, A., J. Crystal Growth 128 (1–4), 343 (1993).Google Scholar
11. Jenkins, I., Irvine, K.G., Spencer, M.G., Dmitriev, V., Chen, N., J. Crystal Growth 128 (1–4), 375 (1993).Google Scholar
12. Avramescu, A., Hirayama, H., Aoyagi, Y., Tanaka, S., J. Crystal Growth 234 (2–3), 435 (2002).Google Scholar
13. Roucka, R., Tolle, J., Smith, D.J., Crazier, P., Tsong, I.S.T., Kouvetakis, J., Applied Physics Letters 79 (18), 2880 (2001).Google Scholar
14. Davydov, V. Yu., Kitaev, Yu.E., Goncharuk, I.N., Smirnov, A.N., Graul, J., Semichinova, O., Uffman, D., Smirnov, M.B., Mirgorodsky, A.P., Evarestov, R.A., Phys. Rev. B 58, 12899 (1998).Google Scholar