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A Study on the Strain and Microstructure in SiGe Film Grown on Si(001) Substrate by MBE

Published online by Cambridge University Press:  21 February 2011

Kyoung-Ik Cho ,
Sahn Nahm ,
Sang-Gi Kim ,
Seung-Chang Lee ,
Kyung-Soo Kim  and
Sin-Chong Park
Kyoung-Ik Cho
Affiliation:
Electronics & Telecommunications Research Institute, Semiconductor Div. Yusong P.O. Box 106, Taejon, 305–600, Korea
Sahn Nahm
Affiliation:
Electronics & Telecommunications Research Institute, Semiconductor Div. Yusong P.O. Box 106, Taejon, 305–600, Korea
Sang-Gi Kim
Affiliation:
Electronics & Telecommunications Research Institute, Semiconductor Div. Yusong P.O. Box 106, Taejon, 305–600, Korea
Seung-Chang Lee
Affiliation:
Electronics & Telecommunications Research Institute, Semiconductor Div. Yusong P.O. Box 106, Taejon, 305–600, Korea
Kyung-Soo Kim
Affiliation:
Electronics & Telecommunications Research Institute, Semiconductor Div. Yusong P.O. Box 106, Taejon, 305–600, Korea
Sin-Chong Park
Affiliation:
Electronics & Telecommunications Research Institute, Semiconductor Div. Yusong P.O. Box 106, Taejon, 305–600, Korea
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Abstract

Si/Si0.8Ge0.2/Si(001) structures were grown at various growth temperatures (250 ∼ 760 °C) using molecular beam epitaxy, and the variation of strain and microstructure of the film was investigated using double crystal X-ray diffractometry and transmission electron microscopy. SiGe films with good single crystallinity were obtained at the growth temperatures of 440 ∼ 600 °C. For the samples grown below 350 °C, an amorphous SiGe film was developed over the SiGe single crystalline layer with a jagged amorphous/crystalline (a/c) interface, and many defects such as stacking faults and microtwins were formed below the a/c interface. Dislocations were developed through out the films for the samples grown above 680 °C. In addition, for the samples grown below 680 °C, the amount of in-plane strain of the SiGe film was found to be about − 8×l0−3 without strain relaxation. However, the SiGe films grown at 760 °C have small in-plain strain of − 4×l0−3 and large strain relaxation of 50%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 356: Symposium B2 – Thin Films: Stresses and Mechanical Properties V , 1994 , 319
Copyright
Copyright © Materials Research Society 1995

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