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A Study on the Electronic Properties of Nitric Oxide Annealed MOS Structures Processed on 4H-SiC

Published online by Cambridge University Press:  07 March 2011

Kerlit Chew ,
Chin-Che Tin ,
Claude Ahyi ,
Kim Nie Chong ,
Meng Suan Liang ,
Sir Cong Chong ,
Rusli  and
Kim Luong Lew
Kerlit Chew
Affiliation:
Universiti Tunku Abdul Rahman (UTAR), Malaysia
Chin-Che Tin
Affiliation:
Auburn University, U.S.A.
Claude Ahyi
Affiliation:
Auburn University, U.S.A.
Kim Nie Chong
Affiliation:
Universiti Tunku Abdul Rahman (UTAR), Malaysia
Meng Suan Liang
Affiliation:
Universiti Tunku Abdul Rahman (UTAR), Malaysia
Sir Cong Chong
Affiliation:
Universiti Tunku Abdul Rahman (UTAR), Malaysia
Rusli
Affiliation:
Nanyang Technological University, Singapore
Kim Luong Lew
Affiliation:
Universiti Tunku Abdul Rahman (UTAR), Malaysia
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Abstract

Interface state density profiling of the thermal oxide / n-type 4H-SiC interface which underwent post-oxidation nitric-oxide (NO) annealing showed that an interface state density of approximately 1×1011 cm−2eV−1 could be achieved at around 0.2 eV below the conduction band. It decreased exponentially by two orders to 1×109 cm-2eV-1 at around 0.9 eV from the conduction band. The values are comparable or better than other published work. The low interface state density achieved near the conduction band is important towards improved channel carrier mobility in SiC MOSFETs. A positive flat-band voltage shift of the SiC based MOS capacitor was also observed. The shift reduced under UV illumination. It could be attributed to slow acceptor-like (negatively-charged) traps, which may have contributed to the instabilities observed in drain current and threshold voltage suffered by SiC MOSFETs.

Keywords

electrical propertiesoxideannealing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1305: Symposium AA – Group IV Semiconductor Nanostructures and Applications , 2011 , mrsf10-1305-aa17-35
Copyright
Copyright © Materials Research Society 2011

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