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A Study on Hysteresis Effect of Barium Strontium Titanate Thin Films for Alternative Gate Dielectric Application

Published online by Cambridge University Press:  10 February 2011

Wen-Jie Qi ,
Keith Zawadzki ,
Renee Nieh ,
Yongjoo Jeon ,
Byoung Hun Lee ,
Aaron Lucas ,
Laegu Kang ,
Jian-Hung Lee  and
Jack C. Lee
Wen-Jie Qi
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Building 160, Austin, TX 78758
Keith Zawadzki
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Building 160, Austin, TX 78758
Renee Nieh
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Building 160, Austin, TX 78758
Yongjoo Jeon
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Building 160, Austin, TX 78758
Byoung Hun Lee
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Building 160, Austin, TX 78758
Aaron Lucas
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Building 160, Austin, TX 78758
Laegu Kang
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Building 160, Austin, TX 78758
Jian-Hung Lee
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Building 160, Austin, TX 78758
Jack C. Lee
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Building 160, Austin, TX 78758
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Abstract

Hysteresis effect of barium strontium titanate (BST) thin films for gate dielectric application has been studied. It is found that the “counterclockwise” hysteresis has strong sweep voltage and operating temperature dependence. It can be reduced or eliminated by proper thermal annealing or by using a barrier layer. A charge trapping and detrapping mechanism has been proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 606: Symposium NN – Chemical Processing of Dielectrics, Insulators & Electronic Ceramics , 1999 , 269
Copyright
Copyright © Materials Research Society 2000

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References

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