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A Study of the Ion Implanted Arsenic Tail in Silicon

Published online by Cambridge University Press:  26 February 2011

S. E. Beck ,
R. J. Jaccodine ,
A. J. Filo  and
R. Irwin
S. E. Beck
Affiliation:
Sherman Fairchild Center #161, Lehigh University, Bethlehem, PA 18015
R. J. Jaccodine
Affiliation:
Sherman Fairchild Center #161, Lehigh University, Bethlehem, PA 18015
A. J. Filo
Affiliation:
AT&T Bell Laboratories, 555 Union Blvd., Allentown, PA 18103
R. Irwin
Affiliation:
AT&T Bell Laboratories, 555 Union Blvd., Allentown, PA 18103
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Abstract

Spreading resistance measurements, Rutherford backscattering spectroscopy, ion channeling, and deep level capacitance transient spectroscopy are used to study ion implanted arsenic in silicon and its tail region. The following comparisons of the furnace annealed samples are made: Electrically active profiles versus total concentration profiles, tail diffusion versus total implant diffusion, and substitutional fractions. These results are compared to currently accepted models for arsenic diffusion in silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 219
Copyright
Copyright © Materials Research Society 1988

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References

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