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Study of Solid/liquid Interfaces in Organic Field-effect Transistors with Ionic Liquids

Published online by Cambridge University Press:  31 January 2011

Shimpei Ono
Affiliation:
[email protected], Central Research Institute of electric power industry, Materials Science Research laboratory, KOmae, Tokyo, Japan
Kazumoto Miwa
Affiliation:
[email protected], Central Research Institute of electric power industry, Materials Science Research laboratory, KOmae, Tokyo, Japan
Shiro Seki
Affiliation:
[email protected], Central Research Institute of electric power industry, Materials Science Research laboratory, KOmae, Tokyo, Japan
Jun Takeya
Affiliation:
[email protected], Osaka University, Graduate School of Science, Toyonaka, Osaka, Japan
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Abstract

We report high-mobility rubrene single-crystal field-effect transistors with ionic-liquid electrolytes used for gate dielectric layers. As the result of fast ionic diffusion to form electric double layers, their capacitances remain more than 1.0 μF/cm2 even at 0.1 MHz. With high carrier mobility of 9.5 cm2/Vs in the rubrene crystal, pronounced current amplification is achieved at the gate voltage of only 0.2 V, which is two orders of magnitude smaller than that necessary for organic thin-film transistors with dielectric gate insulators. The results demonstrate that the ionic-liquid/organic semiconductor interfaces are suited to realize low-power and fast-switching field-effect transistors without sacrificing carrier mobility in forming the solid/liquid interfaces.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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