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Study of Rf-Sputtered Ba(ZrxTi1−x)O3 Thin Films for Ulsi Dram Application

Published online by Cambridge University Press:  10 February 2011

Jian-Hung Lee ,
Tung-Sheng Chen ,
Venkatasubramani Balu ,
Jeong Han ,
Razak Mohammedali ,
Sundar Gopalan ,
Chun-Hui Wong  and
Jack C. Lee
Jian-Hung Lee
Affiliation:
Microelectronics Research Center, Mail Code R9950, The University of Texas at Austin, Austin, TX 78712
Tung-Sheng Chen
Affiliation:
Microelectronics Research Center, Mail Code R9950, The University of Texas at Austin, Austin, TX 78712
Venkatasubramani Balu
Affiliation:
Microelectronics Research Center, Mail Code R9950, The University of Texas at Austin, Austin, TX 78712
Jeong Han
Affiliation:
Microelectronics Research Center, Mail Code R9950, The University of Texas at Austin, Austin, TX 78712
Razak Mohammedali
Affiliation:
Microelectronics Research Center, Mail Code R9950, The University of Texas at Austin, Austin, TX 78712
Sundar Gopalan
Affiliation:
Microelectronics Research Center, Mail Code R9950, The University of Texas at Austin, Austin, TX 78712
Chun-Hui Wong
Affiliation:
Microelectronics Research Center, Mail Code R9950, The University of Texas at Austin, Austin, TX 78712
Jack C. Lee
Affiliation:
Microelectronics Research Center, Mail Code R9950, The University of Texas at Austin, Austin, TX 78712
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Abstract

Barium zirconate-titanate (Ba(ZrxTi1−x)O3, BZT) films with thickness around 60 nm were deposited on Ir substrates using RF magnetron sputtering. The effect of zirconium atomic fraction (x = 0.14 to 0.7), substrate temperature (380 °C to 550 °C) and oxygen partial pressure (0 to 5 mTorr with total pressure 30 mTorr) on leakage current, dielectric constant and dielectric dispersion (capacitance reduction with increasing frequency) was studied. We found that the Zr/Ti ratio played a crucial role in determining the dielectric constant and dispersion. The dielectric constant varies from 26 to 168 while dispersion ranges from 0.80 to 2.58 % loss in capacitance (dielectric constant) per decade of frequency. Low leakage currents (< 1× 10−7 A/cm2) were observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 47
Copyright
Copyright © Materials Research Society 1999

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References

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