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Study of PZT Film Stress in Multilayer Structures for MEMS Devices

Published online by Cambridge University Press:  10 February 2011

E. Zakar ,
M. Dubey ,
R. Polcawich ,
B. Piekarski ,
R. Piekarz ,
J. Conrad  and
R. Widuta
E. Zakar
Affiliation:
US Army Research Laboratory, Adelphi, MD [email protected]
M. Dubey
Affiliation:
US Army Research Laboratory, Adelphi, MD 20783
R. Polcawich
Affiliation:
US Army Research Laboratory, Adelphi, MD 20783, GTS contractor
B. Piekarski
Affiliation:
US Army Research Laboratory, Adelphi, MD 20783
R. Piekarz
Affiliation:
US Army Research Laboratory, Adelphi, MD 20783
J. Conrad
Affiliation:
US Army Research Laboratory, Adelphi, MD 20783
R. Widuta
Affiliation:
US Army Research Laboratory, Adelphi, MD 20783
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Abstract

Residual stress in the multilayer Si/Dielectric/Pt/PZT/Pt stack was measured as a function of annealing conditions, sol-gel derived PZT (Lead Zirconate Titanate -52/48) thickness, SiO2 and/or Si3N4 dielectric films thickness. Residual stress in the Si3N4 layer varied from -201 to +1275 MPa and from -430 to + 511 MPa in the Si02 layer. Furnace annealing of the bottom Pt film reduced the stress over rapid thermal annealing (RTA). Stress due to PZT films was the controlling factor for the final stress of the stack. Upon increasing PZT thickness, stress became less tensile for Si3N4 dielectric and more tensile for Si02. The deposition of the top Pt on PZT followed by RTA at 300°C in nitrogen had a minimal effect on the final stress of the stack. The average tensile stress for the Si/Si02 /Pt/PZT/Pt and Si/Si3N4/Pt/PZT/Pt stacks was 140 ± 25 and 476±235 MPa respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 605: Symposium MM – Materials Science of Microelectromechanical Systems Devices II , 1999 , 287
Copyright
Copyright © Materials Research Society 2000

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References

1. Zakar, E., Dubey, M., Piekarski, B., Conrad, J., Piekarz, R., Widuta, R., “Process and Fabrication of a PZT Thin Film Pressure Sensor,” presented at the 46th Int. Symp. of the Amer. Vac. Soc., Seattle, WA, October 1999 (to be published).Google Scholar
2. Hendrickson, M., Su, T., Trolier-Mckinstry, S., Rod, B.J., Zeto, R.J., Proc. 10th IEEE Int. Symp. Appl. Ferroelectrics, p.683 (Aug. 1996).Google Scholar
3. Piekarski, B., Dubey, M., Devoe, D., Zakar, E., Zeto, R., Conrad, J., Piekarz, R., Ervin, M., “Fabrication of Suspended Piezoelectric Microresonators,” Integrated Ferroelectrics, 24, 147 (1999).10.1080/10584589908215587Google Scholar
4. Zang, M., Polla, D.L., Zurn, S., Cui, T., “Stress and Deformation of PZT Thin Film on Silicon Wafer Due to Thermal Expansion,” presented at the 45th Int. Symp. of the Amer. Vac. Soc., San Francisco, CA, April 1999 (to be published).Google Scholar
5. Chung, I., Yoo, I.K., Lee, W., Chung, C.W., Lee, J.K., “Electrode Stress Effects on Electrical Properties of PZT Thin Film Capacitors,” Proc. 9th IEEE Int. Symp. Appl. Ferroelectrics, p. 527 (1994)Google Scholar
6. Spierings, G.A.C.M., Dormans, G.J.M., Moors, W.G.J., Ulenaers, J.J.E., Larsen, P.K., “Stress in Pt/Pb(Zr,Ti)O3/Pt Capacitors for Integrated Ferroelectrics Devices,” Proc. 9th IEEE Int. Symp. Appl. Ferroelectrics, p. 29 (1994).Google Scholar
7. Flinn, P.A., “Principles and Applications of Wafer Curvature Techniques for Stress Measurements in Thin Films,” Mat. Res. Soc. Symp. Proc. 130, 41 (1989).10.1557/PROC-130-41Google Scholar
8. Madsen, L., Weaver, L., Ljungcrantz, H., Clark, A., “Analysis of the Stress and Interfacial Reactions in Pt/Ti/SiO2/Si for Use with Ferroelectric Thin Films,” J. of Electronic Mater., 27, 5 (1998)Google Scholar