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Study of poly-Si/TaSiN/Pt structure for stacked capacitors

Published online by Cambridge University Press:  11 February 2011

F. Letendu ,
M. C. Hugon ,
O. Voldoire ,
B. Agius ,
I. Vickridge ,
C. Berthier  and
J. M. Lameille
F. Letendu
Affiliation:
LPGP, Universite Paris sud, Orsay, France.
M. C. Hugon
Affiliation:
LPGP, Universite Paris sud, Orsay, France.
O. Voldoire
Affiliation:
LPGP, Universite Paris sud, Orsay, France.
B. Agius
Affiliation:
LPGP, Universite Paris sud, Orsay, France.
I. Vickridge
Affiliation:
GPS, Universite Paris 6 et 7, Paris, France.
C. Berthier
Affiliation:
CEA Saclay, DEN/DPC/SCPA/LALES, Gif sur Yvette, France.
J. M. Lameille
Affiliation:
CEA Saclay, DEN/DPC/SCPA/LALES, Gif sur Yvette, France.
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Abstract

Due to its high oxidation resistance, TaSiN is a promising candidate as an electrically conductive barrier layer for integration of high permittivity oxides in advanced memory devices. In this work, we report on the properties of TaSiN thin films deposited by reactive magnetron sputtering of a TaSi2 target. We have mainly studied the influence of deposition pressure and power density on film properties (composition, density, resistivity). The oxidation resistance of TaSiN films has been investigated at typical conditions for crystallization of perovskite dielectrics. The as-deposited and annealed samples were characterized using Rutherford backscattering spectroscopy and nuclear reaction analysis for atomic composition and XPS for chemical bonding. To study oxidation resistance, films have been processed in 18O2. The concentration depth profiles of 18O was measured after thermal treatments via the narrow resonances of 18O(p,α)15N at 151 keV (fwhm=100eV). The different results suggest that a pressure of 0.5 Pa, a power density of 2.63W/cm2 and a gas flow ratio N2/Ar of 5% allow to perform TaSiN films with high density, low resistivity and good oxidation resistance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 748: Symposium U – Ferroelectric Thin Films XI , 2002 , U1.6
Copyright
Copyright © Materials Research Society 2003

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References

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