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The Study of Hafnium Silicate by Various Nitrogen Gas Annealing Treatment

Published online by Cambridge University Press:  01 February 2011

Dong Chan Suh ,
Kwun Bum Chung ,
Mann-Ho Cho ,
Young Dae Cho  and
Dae-Hong Ko
Dong Chan Suh
Affiliation:
sdc073@hotmail.com, Yonsei University, Ceramic Engineering, Seo Dae Mun-gu Shinchon dong, Seoul, 120749, Korea, Republic of
Kwun Bum Chung
Affiliation:
kchung@ncsu.edu, North Carolina State University, Department of Physics, Raleigh, NC, 8202, United States
Mann-Ho Cho
Affiliation:
mh.cho@yonsei.ac.kr, Yonsei University, Department of Physics, Seoul, 120749, Korea, Republic of
Young Dae Cho
Affiliation:
babyship@yonsei.ac.kr, Yonsei University, Department of Ceramic Engineering, Seoul, 120749, Korea, Republic of
Dae-Hong Ko
Affiliation:
dhko@yonsei.ac.kr, Yonsei University, Department of Ceramic Engineering, Seoul, 120749, Korea, Republic of
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Abstract

Post annealing of Hf-silicate thin film grown by ALD was done with different kind of nitrogen gas and order of annealing. Annealing conditions are as follows: (1) NO gas only, (2) NH3 gas only, (3) NO gas + NH3 gas, and (4) NH3 + NO gas. With these conditions, the physical and electrical properties of nitrided Hf-silicate films were analyzed. Content of nitrogen is decreased with post NO gas annealing. In case of NH3, content of nitrogen is much higher than NO case. Most nitrogen atoms were distributed between Si substrate and Hf-silicate film for NO gas annealing. However, with NH3 gas annealing, nitrogen atoms were distributed in the whole Hf-silicate film evenly. Leakage current was decreased with post NO gas annealing and flat band voltage was also decreased.

Keywords

atomic layer depositionannealingchemical reaction
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1073: Symposium H – Materials Science of High-k Dielectric Stacks—From Fundamentals to Technology , 2008 , 1073-H04-21
Copyright
Copyright © Materials Research Society 2008

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