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Studies of Dielectric Properties of Pulsed Laser Deposited (Ba, Sr)TiO3 Films Using LaNiO3 as Conductive Electrode

Published online by Cambridge University Press:  10 February 2011

Anuranjan Srivastava ,
D. Kumar  and
Rajiv K. Singh
Anuranjan Srivastava
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611-6400
D. Kumar
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611-6400
Rajiv K. Singh
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611-6400
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Abstract

LaNiO3 (LNO) films were used as conductive bottom and top electrodes for the fabrication of (Ba0.5Sr0.5) TiO3 (BST) capacitors on silicon substrates. LNO as well as BST films were grown in-situ using a pulsed laser deposition technique with no subsequent heating or oxygenation treatments. Capacitance and leakage current measurements of BST films were carried out using LNO/BST/LNO/Si structures. Using these measurements, the dielectric constant and leakage current of BST films were found to be ∼250 and ∼10−8 A/cm2, respectively. The results obtained in the present study suggest that LNO is a good contact electrode material for BST films in the fabrication of BST capacitors with good structural and electrical properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 41
Copyright
Copyright © Materials Research Society 1999

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References

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