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The Structure of Si and Ge Deposited by Ion Beam Sputtering

Published online by Cambridge University Press:  22 February 2011

H. Windischmann ,
J. M. Cavese ,
R. W. Collins ,
R. D. Harris  and
J. Gonzalez-Hernandez
H. Windischmann
Affiliation:
The Standard Oil Company (Ohio), 4440 Warrensville Center Rd., Cleveland, Ohio 44128
J. M. Cavese
Affiliation:
The Standard Oil Company (Ohio), 4440 Warrensville Center Rd., Cleveland, Ohio 44128
R. W. Collins
Affiliation:
The Standard Oil Company (Ohio), 4440 Warrensville Center Rd., Cleveland, Ohio 44128
R. D. Harris
Affiliation:
The Standard Oil Company (Ohio), 4440 Warrensville Center Rd., Cleveland, Ohio 44128
J. Gonzalez-Hernandez
Affiliation:
Energy Conversion Devices, Inc., 1675 Maple Pd., Troy, Michigan 48084
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Abstract

The crystallinity for silicon and germanium films deposited by ion beam sputtering (IBS) as a function of substrate temperatures was determined using Raman spectroscopy, spectroscopic ellipsometry, electrical conductivity and x-ray diffraction measurements. The results show that IBS silicon crystallizes between 300–350°C while germanium crystallizes between 20–200°C. Reasonably good agreement is obtained among the four distinctively different characterization techniques in identifying the onset of crystallinity. A direct relationship is observed between the substrate temperature required for crystallization and the log of the operating pressure for various deposition techniques. Energetic particle stimulation during film growth appears to reduce the crystallization temperature at a given operating pressure. Raman data show that the crystallization temperature depends on the deposition rate. A graded structure is observed in films deposited above 300°C, probably due to oxygen contamination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 47: Symposium C – Thin Films: The Relationship of Structure to Properties , 1985 , 187
Copyright
Copyright © Materials Research Society 1985

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